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IDH20G65C6XKSA1

IDH20G65C6XKSA1
Mfr. #:
IDH20G65C6XKSA1
निर्माता:
Infineon Technologies
विवरण:
Schottky Diodes & Rectifiers SIC DIODES
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IDH20G65C6XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IDH20G65C6XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
Schottky डायोड्स र Rectifiers
RoHS:
Y
उत्पादन:
Schottky सिलिकन कार्बाइड डायोड
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
यदि - फर्वार्ड वर्तमान:
41 A
Vrrm - दोहोरिने उल्टो भोल्टेज:
650 V
Vf - फर्वार्ड भोल्टेज:
1.25 V
Ifsm - फर्वार्ड सर्ज वर्तमान:
99 A
कन्फिगरेसन:
एकल
प्रविधि:
SiC
Ir - उल्टो वर्तमान:
2 uA
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
प्याकेजिङ:
ट्यूब
ब्रान्ड:
Infineon टेक्नोलोजीहरू
Pd - शक्ति अपव्यय:
108 W
उत्पादन प्रकार:
Schottky डायोड्स र Rectifiers
कारखाना प्याक मात्रा:
500
उपश्रेणी:
डायोड र रेक्टिफायरहरू
व्यापार नाम:
CoolSiC
भाग # उपनाम:
IDH20G65C6 SP001600962
एकाइ वजन:
0.063493 oz
Tags
IDH20G6, IDH20G, IDH20, IDH2, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Diode Schottky SiC 650V 41A 2-Pin(2+Tab) TO-220 Tube
***ronik
SiC-Diode 20A 650V 1,25V TO220
***i-Key
DIODE SCHOTTKY 650V 41A TO220-2
***ark
Sic Schottky Diode, 650V, 41A, To-220; Product Range:coolsic 6G 650V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:41A; Total Capacitive Charge Qc:26.8Nc; Diode Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 41A, TO-220; Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:41A; Total Capacitive Charge Qc:26.8nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):41A; Forward Surge Current Ifsm Max:99A; Forward Voltage VF Max:1.35V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY SIC 650V 41A TO-220; Gamma Prodotti:CoolSiC 6G 650V Series; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:650V; Corrente Diretta Continua If:41A; Potenza Reattiva Capacitiva Qc:26.8nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):41A; Corrente di Picco Diretta Ifsm Max:99A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.35V
***ineon
The CoolSiC Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). | Summary of Features: The lowest V F: 1.25V; Best-in-class figure of merit (Q c x V F); No reverse recovery charge; Temperature independent switching behavior; High dv/dt ruggedness; Optimized thermal behavior | Benefits: Improved system efficiency over all load conditions; Increased system power density; Reduced cooling requirements and increased system reliability; Enables extremely fast switching; Easy and effective match with CoolMOS 7 families; Optimal price performance | Target Applications: Server; Telecom; PC power; Solar; Lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
CoolSiC™ 650V Schottky 6th Generation Diodes
Infineon CoolSiC™ 650V Schottky 6th Generation Diodes feature a proprietary diffusion soldering process, a more compact design, thin-wafer technology and a novel Schottky metal system. This results in improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). CoolSiC™ Generation 6 complement the 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
भाग # Mfg। विवरण स्टक मूल्य
IDH20G65C6XKSA1
DISTI # V36:1790_18191491		Infineon Technologies AGIDH20G65C6XKSA10
  • 500000:$3.9310
  • 250000:$3.9370
  • 50000:$4.7910
  • 5000:$6.6080
  • 500:$6.9300
IDH20G65C6XKSA1
DISTI # IDH20G65C6XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 650V 41A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 500:$5.2313
  • 100:$6.0075
  • 25:$6.9188
  • 10:$7.2560
  • 1:$8.0300
IDH20G65C6XKSA1
DISTI # SP001600962		Infineon Technologies AGSIC DIODES (Alt: SP001600962)
RoHS: Compliant
Min Qty: 1		Europe - 500
  • 1000:€3.6900
  • 500:€3.9900
  • 100:€4.0900
  • 50:€4.2900
  • 25:€4.3900
  • 10:€4.5900
  • 1:€5.0900
IDH20G65C6XKSA1
DISTI # IDH20G65C6XKSA1		Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDH20G65C6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$4.1900
  • 3000:$4.2900
  • 2000:$4.4900
  • 1000:$4.5900
  • 500:$4.7900
IDH20G65C6XKSA1
DISTI # 33AC2817		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 41A, TO-220,Product Range:CoolSiC 6G 650V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:650V,Continuous Forward Current If:41A,Total Capacitive Charge Qc:26.8nC,Diode Case RoHS Compliant: Yes47
  • 500:$5.2900
  • 250:$5.8000
  • 100:$6.0700
  • 50:$6.5300
  • 25:$6.9900
  • 10:$7.3300
  • 1:$8.1100
IDH20G65C6XKSA1
DISTI # 726-IDH20G65C6XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant		5170
  • 1:$8.0300
  • 10:$7.2600
  • 25:$6.9200
  • 100:$6.0100
  • 250:$5.7400
  • 500:$5.2400
  • 1000:$4.5600
IDH20G65C6XKSA1
DISTI # IDH20G65C6		Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,650V,20A,108W,PG-TO220-249
  • 50:$5.9100
  • 10:$6.5900
  • 3:$7.4600
  • 1:$8.2800
IDH20G65C6XKSA1
DISTI # 2779283		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 41A, TO-220
RoHS: Compliant		83
  • 250:$6.7600
  • 100:$6.8900
  • 50:$7.2700
  • 10:$7.6900
  • 5:$8.6900
  • 1:$9.3100
IDH20G65C6XKSA1
DISTI # 2779283		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 41A, TO-220198
  • 100:£4.5900
  • 50:£4.9400
  • 10:£5.2800
  • 5:£6.1200
  • 1:£6.6600
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OMO.#: OMO-IDH20G120C5XKSA1

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OMO.#: OMO-BOOSTXL-3PHGANINV

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IPW60R040C7XKSA1

Mfr.#: IPW60R040C7XKSA1

OMO.#: OMO-IPW60R040C7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 50A TO247-3
BOOSTXL-3PHGANINV

Mfr.#: BOOSTXL-3PHGANINV

OMO.#: OMO-BOOSTXL-3PHGANINV-TEXAS-INSTRUMENTS

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IDWD30G120C5XKSA1

Mfr.#: IDWD30G120C5XKSA1

OMO.#: OMO-IDWD30G120C5XKSA1-1190

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IGT60R070D1ATMA1

Mfr.#: IGT60R070D1ATMA1

OMO.#: OMO-IGT60R070D1ATMA1-INFINEON-TECHNOLOGIES

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उपलब्धता
स्टक:
Available
अर्डर मा:
1988
मात्रा प्रविष्ट गर्नुहोस्:
IDH20G65C6XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ८.०३
US$ ८.०३
10
US$ ७.२६
US$ ७२.६०
25
US$ ६.९२
US$ १७३.००
100
US$ ६.०१
US$ ६०१.००
250
US$ ५.७४
US$ १ ४३५.००
500
US$ ५.२४
US$ २ ६२०.००
1000
US$ ४.५६
US$ ४ ५६०.००
2500
US$ ४.३९
US$ १० ९७५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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