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SI6562CDQ-T1-GE3

SI6562CDQ-T1-GE3
Mfr. #:
SI6562CDQ-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N/P-CH 20V 6.7A 8-TSSOP
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI6562CDQ-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI6562CDQ-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI6562CDQ-GE3
एकाइ - वजन
0.005573 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
8-TSSOP (0.173", 4.40mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-TSSOP
कन्फिगरेसन
दोहोरो दोहोरो स्रोत
FET-प्रकार
N र P- च्यानल
पावर-अधिकतम
1.6W, 1.7W
ट्रान्जिस्टर-प्रकार
1 N-Channel 1 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
20V
इनपुट-Capacitance-Ciss-Vds
850pF @ 10V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
6.7A, 6.1A
Rds-on-max-Id-Vgs
22 mOhm @ 5.7A, 4.5V
Vgs-th-max-Id
1.5V @ 250μA
गेट-चार्ज-Qg-Vgs
23nC @ 10V
Pd-शक्ति-डिसिपेशन
1.1 W 1.2 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
10 ns 25 ns
उदय-समय
10 ns 25 ns
Vgs-गेट-स्रोत-भोल्टेज
12 V
आईडी-निरन्तर-नाली-वर्तमान
5.7 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
20 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
18 mOhms 24 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
25 nS 45 nS
सामान्य-टर्न-अन-डिले-समय
12 nS 30 nS
च्यानल-मोड
वृद्धि
Tags
SI6562CDQ-T, SI6562CDQ, SI6562C, SI656, SI65, SI6
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si6562CDQ Series 20 V 0.022 Ohm SMT Dual N & P Channel MOSFET - TSSOP-8
***ical
Trans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R
***ark
Mosfet, N & P Channel, 20V, 6.7A, Tssop-8, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.7A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:surface Mountrohs Compliant: No
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
भाग # Mfg। विवरण स्टक मूल्य
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 20V 6.7A 8-TSSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3025In Stock
  • 1000:$0.5013
  • 500:$0.6350
  • 100:$0.8189
  • 10:$1.0360
  • 1:$1.1700
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 20V 6.7A 8-TSSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3025In Stock
  • 1000:$0.5013
  • 500:$0.6350
  • 100:$0.8189
  • 10:$1.0360
  • 1:$1.1700
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 6.7A 8-TSSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4543
SI6562CDQ-T1-GE3
DISTI # SI6562CDQ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6562CDQ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 3000:$0.4289
  • 6000:$0.4159
  • 12000:$0.3989
  • 18000:$0.3879
  • 30000:$0.3779
SI6562CDQ-T1-GE3
DISTI # 26T3807		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R - Product that comes on tape, but is not reeled (Alt: 26T3807)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.0400
  • 25:$0.8500
  • 50:$0.7510
  • 100:$0.6520
  • 250:$0.6070
  • 500:$0.5610
  • 1000:$0.4430
SI6562CDQ-T1-GE3
DISTI # 26T3807		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.7A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mVRoHS Compliant: Yes0
  • 1000:$0.4430
  • 500:$0.5610
  • 250:$0.6070
  • 100:$0.6520
  • 50:$0.7510
  • 25:$0.8500
  • 1:$1.0400
SI6562CDQ-T1-GE3.
DISTI # 28AC2157		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.7A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Product Range:- RoHS Compliant: No3000
  • 30000:$0.3660
  • 18000:$0.3720
  • 12000:$0.3780
  • 6000:$0.3930
  • 3000:$0.4030
  • 1:$0.4130
SI6562CDQ-T1-GE3
DISTI # 781-SI6562CDQ-GE3		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
RoHS: Compliant		835
  • 1:$1.0400
  • 10:$0.8500
  • 100:$0.6520
  • 500:$0.5610
  • 1000:$0.4430
  • 3000:$0.4130
  • 6000:$0.3930
  • 9000:$0.3780
SI6562CDQ-T1-GE3Vishay IntertechnologiesSi6562CDQ Series 20 V 0.022 Ohm SMT Dual N & P Channel MOSFET - TSSOP-8
RoHS: Compliant		9000Reel
  • 3000:$0.4450
SI6562CDQ-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
RoHS: Compliant		Americas - 12000
    SI6562CDQ-T1-GE3
    DISTI # 2458751    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-
    RoHS: Compliant    		0
    • 9000:$0.5990
    • 6000:$0.6220
    • 3000:$0.6540
    • 1000:$0.7020
    • 500:$0.8880
    • 100:$1.0400
    • 10:$1.3500
    • 1:$1.6500
    SI6562CDQ-T1-GE3
    DISTI # 2335341    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A,TSSOP-6
    RoHS: Compliant    		3038
    • 1000:$0.8120
    • 500:$0.8880
    • 100:$1.0400
    • 10:$1.3500
    • 1:$1.6500
    SI6562CDQ-T1-GE3
    DISTI # 2335341    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6.7A,TSSOP-6
    RoHS: Compliant    		0
    • 500:£0.4330
    • 250:£0.4670
    • 100:£0.5020
    • 25:£0.6540
    • 5:£0.7310
    छवि भाग # विवरण
    SI6562CDQ-T1-GE3

    Mfr.#: SI6562CDQ-T1-GE3

    OMO.#: OMO-SI6562CDQ-T1-GE3

    		 MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
    SI6562CDQ-T1-GE3-CUT TAPE

    Mfr.#: SI6562CDQ-T1-GE3-CUT TAPE

    OMO.#: OMO-SI6562CDQ-T1-GE3-CUT-TAPE-1190

    		 नयाँ र मौलिक
    SI6562CD

    Mfr.#: SI6562CD

    OMO.#: OMO-SI6562CD-1190

    		 नयाँ र मौलिक
    SI6562CD-T1-GE3

    Mfr.#: SI6562CD-T1-GE3

    OMO.#: OMO-SI6562CD-T1-GE3-1190

    		 नयाँ र मौलिक
    SI6562CDQ

    Mfr.#: SI6562CDQ

    OMO.#: OMO-SI6562CDQ-1190

    		 नयाँ र मौलिक
    SI6562CDQ-T1-E3

    Mfr.#: SI6562CDQ-T1-E3

    OMO.#: OMO-SI6562CDQ-T1-E3-1190

    		 नयाँ र मौलिक
    SI6562CDQ-T1-GE3

    Mfr.#: SI6562CDQ-T1-GE3

    OMO.#: OMO-SI6562CDQ-T1-GE3-VISHAY

    		 MOSFET N/P-CH 20V 6.7A 8-TSSOP
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5000
    मात्रा प्रविष्ट गर्नुहोस्:
    SI6562CDQ-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.५६
    US$ ०.५६
    10
    US$ ०.५३
    US$ ५.३४
    100
    US$ ०.५१
    US$ ५०.६३
    500
    US$ ०.४८
    US$ २३९.०५
    1000
    US$ ०.४५
    US$ ४५०.००
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