SI6562C

SI6562CD vs SI6562CD-T1-GE3 vs SI6562CDQ

 
PartNumberSI6562CDSI6562CD-T1-GE3SI6562CDQ
Description
Manufacturer--VISHAY
Product Category--FETs - Arrays
Series--TrenchFETR
Packaging--Digi-ReelR Alternate Packaging
Part Aliases--SI6562CDQ-GE3
Unit Weight--0.005573 oz
Mounting Style--SMD/SMT
Package Case--8-TSSOP (0.173", 4.40mm Width)
Technology--Si
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--2 Channel
Supplier Device Package--8-TSSOP
Configuration--Dual Dual Source
FET Type--N and P-Channel
Power Max--1.6W, 1.7W
Transistor Type--1 N-Channel 1 P-Channel
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--850pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--6.7A, 6.1A
Rds On Max Id Vgs--22 mOhm @ 5.7A, 4.5V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--23nC @ 10V
Pd Power Dissipation--1.1 W 1.2 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--10 ns 25 ns
Rise Time--10 ns 25 ns
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--5.7 A
Vds Drain Source Breakdown Voltage--20 V
Rds On Drain Source Resistance--18 mOhms 24 mOhms
Transistor Polarity--N-Channel P-Channel
Typical Turn Off Delay Time--25 nS 45 nS
Typical Turn On Delay Time--12 nS 30 nS
Channel Mode--Enhancement
निर्माता भाग # विवरण RFQ
Vishay / Siliconix
Vishay / Siliconix
SI6562CDQ-T1-GE3 MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
SI6562CDQ-T1-GE3-CUT TAPE नयाँ र मौलिक
SI6562CD नयाँ र मौलिक
SI6562CD-T1-GE3 नयाँ र मौलिक
SI6562CDQ नयाँ र मौलिक
SI6562CDQ-T1-E3 नयाँ र मौलिक
Vishay
Vishay
SI6562CDQ-T1-GE3 MOSFET N/P-CH 20V 6.7A 8-TSSOP
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