 | | | |
| PartNumber | SI6562 | SI6562CD | SI6562CD-T1-GE3 |
| Description | |||
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Arrays | - | - |
| Series | TrenchFETR | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Part Aliases | SI6562CDQ-GE3 | - | - |
| Unit Weight | 0.005573 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | 8-TSSOP (0.173", 4.40mm Width) | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 2 Channel | - | - |
| Supplier Device Package | 8-TSSOP | - | - |
| Configuration | Dual Dual Source | - | - |
| FET Type | N and P-Channel | - | - |
| Power Max | 1.6W, 1.7W | - | - |
| Transistor Type | 1 N-Channel 1 P-Channel | - | - |
| Drain to Source Voltage Vdss | 20V | - | - |
| Input Capacitance Ciss Vds | 850pF @ 10V | - | - |
| FET Feature | Logic Level Gate | - | - |
| Current Continuous Drain Id 25°C | 6.7A, 6.1A | - | - |
| Rds On Max Id Vgs | 22 mOhm @ 5.7A, 4.5V | - | - |
| Vgs th Max Id | 1.5V @ 250μA | - | - |
| Gate Charge Qg Vgs | 23nC @ 10V | - | - |
| Pd Power Dissipation | 1.1 W 1.2 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 10 ns 25 ns | - | - |
| Rise Time | 10 ns 25 ns | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Id Continuous Drain Current | 5.7 A | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Rds On Drain Source Resistance | 18 mOhms 24 mOhms | - | - |
| Transistor Polarity | N-Channel P-Channel | - | - |
| Typical Turn Off Delay Time | 25 nS 45 nS | - | - |
| Typical Turn On Delay Time | 12 nS 30 nS | - | - |
| Channel Mode | Enhancement | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6562CDQ-T1-GE3 | MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR | |
| SI6562DQ-T1-E3 | MOSFET RECOMMENDED ALT 781-SI6562CDQ-GE3 | ||
| SI6562CDQ-T1-GE3-CUT TAPE | नयाँ र मौलिक | ||
| SI6562 | नयाँ र मौलिक | ||
| SI6562CD | नयाँ र मौलिक | ||
| SI6562CD-T1-GE3 | नयाँ र मौलिक | ||
| SI6562CDQ | नयाँ र मौलिक | ||
| SI6562CDQ-T1-E3 | नयाँ र मौलिक | ||
| SI6562DQ | नयाँ र मौलिक | ||
| SI6562DQ-T1 | MOSFET 20V 4.5/3.5A | ||
| SI6562DQ-T1-GE3 SI6562 | नयाँ र मौलिक | ||
| SI6562DQ-T1/562 | नयाँ र मौलिक | ||
Vishay |
SI6562CDQ-T1-GE3 | MOSFET N/P-CH 20V 6.7A 8-TSSOP | |
| SI6562DQ-T1-E3 | MOSFET N/P-CH 20V 8-TSSOP | ||
| SI6562DQ-T1-GE3 | MOSFET N/P-CH 20V 8-TSSOP |