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IXFN64N60P

IXFN64N60P
Mfr. #:
IXFN64N60P
निर्माता:
Littelfuse
विवरण:
MOSFET 600V 64A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFN64N60P डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN64N60P DatasheetIXFN64N60P Datasheet (P4-P5)
ECAD Model:
थप जानकारी:
IXFN64N60P थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
चेसिस माउन्ट
प्याकेज / केस:
SOT-227-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
50 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
96 mOhms
Vgs - गेट-स्रोत भोल्टेज:
30 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
700 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
HiPerFET
प्याकेजिङ:
ट्यूब
उचाइ:
9.6 mm
लम्बाइ:
38.2 mm
शृङ्खला:
IXFN64N60
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
25.07 mm
ब्रान्ड:
IXYS
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
63 S
पतन समय:
24 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
23 ns
कारखाना प्याक मात्रा:
10
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
79 ns
सामान्य टर्न-अन ढिलाइ समय:
28 ns
एकाइ वजन:
1.058219 oz
Tags
IXFN64, IXFN6, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
भाग # Mfg। विवरण स्टक मूल्य
IXFN64N60P
DISTI # V99:2348_15877446		IXYS CorporationTrans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B
RoHS: Compliant		6
  • 500:$16.1300
  • 200:$16.2200
  • 100:$17.8500
  • 50:$18.5799
  • 25:$19.6000
  • 10:$21.5600
  • 5:$22.3299
  • 1:$23.7300
IXFN64N60P
DISTI # V36:1790_15877446		IXYS CorporationTrans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B
RoHS: Compliant		0
  • 10000:$13.8700
  • 5000:$13.8800
  • 1000:$15.9900
  • 100:$21.0900
  • 10:$22.0300
IXFN64N60P
DISTI # IXFN64N60P-ND		IXYS CorporationMOSFET N-CH 600V 50A SOT-227
RoHS: Compliant
Min Qty: 10
Container: Tube		Temporarily Out of Stock
  • 10:$22.0340
IXFN64N60P
DISTI # 27135510		IXYS CorporationTrans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B
RoHS: Compliant		6
  • 1:$23.7300
IXFN64N60P
DISTI # 58M7626		IXYS CorporationMOSFET, N, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.096ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:700W RoHS Compliant: Yes10
  • 250:$17.4400
  • 100:$19.0100
  • 50:$19.5800
  • 25:$20.4500
  • 10:$22.2500
  • 5:$22.8600
  • 1:$24.0600
IXFN64N60P
DISTI # 747-IXFN64N60P		IXYS CorporationMOSFET 600V 64A
RoHS: Compliant		297
  • 1:$23.8200
  • 5:$22.6300
  • 10:$22.0300
  • 25:$20.2500
  • 50:$19.3900
  • 100:$18.8200
  • 200:$17.2700
IXFN64N60P
DISTI # IXFN64N60P		IXYS CorporationN-Ch 600V 50A 700W 0,096R SOT227B
RoHS: Compliant		9
  • 1:€19.1500
  • 5:€16.1500
  • 10:€15.1500
  • 25:€14.6000
IXFN64N60P
DISTI # 1427328		IXYS CorporationMOSFET, N, SOT-227B5
  • 100:£13.1800
  • 50:£14.7900
  • 10:£15.4500
  • 5:£17.2600
  • 1:£18.1700
IXFN64N60P
DISTI # 1427328		IXYS CorporationMOSFET, N, SOT-227B
RoHS: Compliant		10
  • 100:$28.3600
  • 50:$29.2200
  • 25:$30.5200
  • 10:$33.2000
  • 5:$34.1000
  • 1:$35.9000
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उपलब्धता
स्टक:
297
अर्डर मा:
2280
मात्रा प्रविष्ट गर्नुहोस्:
IXFN64N60P को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २३.८२
US$ २३.८२
5
US$ २२.६३
US$ ११३.१५
10
US$ २२.०३
US$ २२०.३०
25
US$ २०.२५
US$ ५०६.२५
50
US$ १९.३९
US$ ९६९.५०
100
US$ १८.८२
US$ १ ८८२.००
200
US$ १७.२७
US$ ३ ४५४.००
500
US$ १६.४४
US$ ८ २२०.००
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