IPB117N20NFDATMA1

IPB117N20NFDATMA1
Mfr. #:
IPB117N20NFDATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 200V 84A D2PAK-2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB117N20NFDATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
84 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
10.3 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
87 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
300 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS फास्ट डायोड
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
70 S
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
10 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
24 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
भाग # उपनाम:
IPB117N20NFD SP001107232
एकाइ वजन:
0.068654 oz
Tags
IPB117, IPB11, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK Infineon IPB117N20NFDATMA1
***ure Electronics
Single N-Channel 200 V 11.7 mOhm 65 nC OptiMOS™ Power Mosfet - D2PAK-3
***p One Stop Japan
Trans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R
***et Europe
Trans MOSFET N-CH 200V 84A 3-Pin D2PAK T/R
***ical
Trans MOSFET N-CH 200V 84A 3-Pin(2+Tab) TO-263
***i-Key
MOSFET N-CH 200V 84A D2PAK
***ronik
N-CH 200V 84A 11,7mOhm TO263
***ark
Mosfet, N-Ch, 200V, 84A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0103Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 84A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0103ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS FD Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 200V, 84A, TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:84A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0103ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS FD Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
भाग # Mfg। विवरण स्टक मूल्य
IPB117N20NFDATMA1
DISTI # V72:2272_06377686
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R720
  • 500:$3.6750
  • 250:$4.2160
  • 100:$4.4429
  • 25:$4.6080
  • 10:$5.1200
  • 1:$6.6099
IPB117N20NFDATMA1
DISTI # V36:1790_06377686
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R0
  • 1000000:$2.6750
  • 500000:$2.6780
  • 100000:$2.9070
  • 10000:$3.3090
  • 1000:$3.3760
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 84A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
910In Stock
  • 500:$4.1225
  • 100:$4.8427
  • 10:$5.9110
  • 1:$6.5800
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 84A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
910In Stock
  • 500:$4.1225
  • 100:$4.8427
  • 10:$5.9110
  • 1:$6.5800
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 84A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$3.2068
  • 1000:$3.3756
IPB117N20NFDATMA1
DISTI # 32874591
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R720
  • 500:$3.6750
  • 250:$4.2160
  • 100:$4.4429
  • 25:$4.6080
  • 10:$5.1200
  • 3:$6.6099
IPB117N20NFDATMA1
DISTI # SP001107232
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin D2PAK T/R (Alt: SP001107232)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 1000
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.4900
  • 2000:€2.5900
  • 1000:€2.6900
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin D2PAK T/R - Tape and Reel (Alt: IPB117N20NFDATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$2.2900
  • 10000:$2.2900
  • 4000:$2.3900
  • 2000:$2.4900
  • 1000:$2.5900
IPB117N20NFDATMA1
DISTI # 97Y1821
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:84A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 500:$3.8500
  • 250:$4.2800
  • 100:$4.5100
  • 50:$4.7500
  • 25:$4.9800
  • 10:$5.2100
  • 1:$6.1300
IPB117N20NFDATMA1Infineon Technologies AGSingle N-Channel 200 V 11.7 mOhm 65 nC OptiMOS Power Mosfet - D2PAK-3
RoHS: Not Compliant
6Cut Tape/Mini-Reel
  • 1:$4.5200
  • 50:$3.2900
  • 100:$3.1100
  • 250:$2.8900
  • 500:$2.7300
IPB117N20NFD
DISTI # 726-IPB117N20NFDATMA
Infineon Technologies AGMOSFET N-Ch 200V 84A D2PAK-2
RoHS: Compliant
325
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2000:$3.0500
IPB117N20NFDATMA1
DISTI # 726-IPB117N20NFD
Infineon Technologies AGMOSFET N-Ch 200V 84A D2PAK-2
RoHS: Compliant
62
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2000:$3.0500
IPB117N20NFDATMA1
DISTI # 1107458P
Infineon Technologies AGMOSFET N-CHAN OPTIMOS-FD 200V 84A TO263, RL500
  • 200:£3.2600
  • 100:£3.4300
  • 40:£3.6700
  • 10:£4.1050
IPB117N20NFDATMA1
DISTI # 2617439
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-263-3
RoHS: Compliant
223
  • 500:$6.6000
  • 100:$8.1400
  • 10:$9.9300
  • 1:$11.1100
IPB117N20NFDATMA1
DISTI # 2617439
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-263-3559
  • 500:£2.9400
  • 250:£3.2600
  • 100:£3.4400
  • 10:£3.9800
  • 1:£5.1600
छवि भाग # विवरण
ISO7763FDW

Mfr.#: ISO7763FDW

OMO.#: OMO-ISO7763FDW

Digital Isolators ISO7763FDW/R DIG ISO - MYNA - 6CH
IPB110N20N3LFATMA1

Mfr.#: IPB110N20N3LFATMA1

OMO.#: OMO-IPB110N20N3LFATMA1

MOSFET
STD13N60DM2

Mfr.#: STD13N60DM2

OMO.#: OMO-STD13N60DM2

MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
R6020KNX

Mfr.#: R6020KNX

OMO.#: OMO-R6020KNX

MOSFET Nch 600V 20A Si MOSFET
IDD06SG60CXTMA2

Mfr.#: IDD06SG60CXTMA2

OMO.#: OMO-IDD06SG60CXTMA2

Schottky Diodes & Rectifiers SIC DIODES
C3M0075120J

Mfr.#: C3M0075120J

OMO.#: OMO-C3M0075120J

MOSFET SIC MOSFET 1200V 75 mOhm TO-263-7
08055U510GAT2A

Mfr.#: 08055U510GAT2A

OMO.#: OMO-08055U510GAT2A

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 51 pF 0.02 2% Tol
ERJ-PB3B4991V

Mfr.#: ERJ-PB3B4991V

OMO.#: OMO-ERJ-PB3B4991V

Thick Film Resistors - SMD 0603 Anti-Surge Res. 0.1%, 4.99Koh
08055U510GAT2A

Mfr.#: 08055U510GAT2A

OMO.#: OMO-08055U510GAT2A-AVX

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 5.1pF 2%
STD13N60DM2

Mfr.#: STD13N60DM2

OMO.#: OMO-STD13N60DM2-STMICROELECTRONICS

N-CHANNEL 600 V, 0.310 OHM TYP.,
उपलब्धता
स्टक:
173
अर्डर मा:
2156
मात्रा प्रविष्ट गर्नुहोस्:
IPB117N20NFDATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ६.०७
US$ ६.०७
10
US$ ५.१६
US$ ५१.६०
100
US$ ४.४७
US$ ४४७.००
250
US$ ४.२४
US$ १ ०६०.००
500
US$ ३.८१
US$ १ ९०५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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