IPB110N20N3LFATMA1

Mfr. #:: IPB110N20N3LFATMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB110N20N3LFATMA1 डाटा पाना
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ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 200 V

आईडी - निरन्तर ड्रेन वर्तमान:: 88 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 9.8 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2.2 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 76 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 250 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: Optimos

प्याकेजिङ:: रील

शृङ्खला:: Optimos 5

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: Infineon टेक्नोलोजीहरू

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 16 S

पतन समय:: 26 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 70 ns

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 79 ns

सामान्य टर्न-अन ढिलाइ समय:: 6 ns

भाग # उपनाम:: IPB110N20N3LF SP001503864

एकाइ वजन:: 0.077603 oz

Tags: IPB110, IPB11, IPB1, IPB

Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB110N20N3LFATMA1 विवरण

***ical: Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R

***i-Key: MOSFET N-CH 200 D2PAK-3

***ronik: N-CH 200V 88A 11mOhm D2PAK

***et Europe: DIFFERENTIATED MOSFETS

***ark: Mosfet, N-Ch, 200V, 88A, 250W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0098Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 200V, 88A, 250W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN N, 200V, 88A, 250W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:88A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0098ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.2V; Dissipazione di Potenza Pd:250W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 3 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB110N20N3LFATMA1 DISTI # V72:2272_17076776	Infineon Technologies AG	DIFFERENTIATED MOSFETS	58	25:$5.6780 10:$5.9310 1:$6.5000
IPB110N20N3LFATMA1 DISTI # V36:1790_17076776	Infineon Technologies AG	DIFFERENTIATED MOSFETS	0
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200 D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2966In Stock	500:$5.1425 100:$6.1379 10:$7.4650 1:$8.2900
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200 D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2966In Stock	500:$5.1425 100:$6.1379 10:$7.4650 1:$8.2900
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200 D2PAK-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	2000:$4.1875 1000:$4.3485
IPB110N20N3LFATMA1 DISTI # 26196752	Infineon Technologies AG	DIFFERENTIATED MOSFETS	58	25:$6.1039 10:$6.3758 2:$6.9875
IPB110N20N3LFATMA1 DISTI # SP001503864	Infineon Technologies AG	DIFFERENTIATED MOSFETS (Alt: SP001503864) RoHS: Compliant Min Qty: 1000	Europe - 1000	1000:€3.8900 2000:€3.7900 4000:€3.5900 6000:€3.3900 10000:€3.0900
IPB110N20N3LFATMA1 DISTI # IPB110N20N3LFATMA1	Infineon Technologies AG	DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB110N20N3LFATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$4.1900 2000:$3.9900 4000:$3.8900 6000:$3.6900 10000:$3.6900
IPB110N20N3LFATMA1 DISTI # 93AC7102	Infineon Technologies AG	MOSFET, N-CH, 200V, 88A, 250W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:88A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.2V,Power RoHS Compliant: Yes	1000	500:$3.6200 250:$3.9800 100:$4.1700 50:$4.4800 25:$4.8000 10:$5.0300 1:$5.5700
IPB110N20N3LFATMA1 DISTI # 726-IPB110N20N3LFATM	Infineon Technologies AG	MOSFET RoHS: Compliant	1825	1:$6.9600 10:$6.2900 25:$6.0000 100:$5.2100 250:$4.9700 500:$4.5300 1000:$3.9500 2000:$3.8000
IPB110N20N3LFATMA1 DISTI # XSKDRABV0021212	Infineon Technologies AG	RoHS: Compliant	3000 in Stock0 on Order	3000:$6.0000 1000:$6.4320
IPB110N20N3LFATMA1 DISTI # 2986460	Infineon Technologies AG	MOSFET, N-CH, 200V, 88A, 250W, TO-263 RoHS: Compliant	1000	100:£4.0100 50:£4.3300 10:£4.6400 5:£5.3500 1:£5.8300
IPB110N20N3LFATMA1 DISTI # 2986460	Infineon Technologies AG	MOSFET, N-CH, 200V, 88A, 250W, TO-263 RoHS: Compliant	1000	100:$5.9000 50:$6.5880 25:$7.6494 10:$7.7958 5:$8.3997 1:$9.3147

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: ATSAMC21E18A-MUT OMO.#: OMO-ATSAMC21E18A-MUT	ARM Microcontrollers - MCU 32QFN,85C TEMP, GREEN, 5V, 48MHZ, T&R
	Mfr.#: LTC7810ILXE#PBF OMO.#: OMO-LTC7810ILXE-PBF	Switching Controllers 150V L IQ, 2x, 2-PhSync Buck DC/DC Cntr
	Mfr.#: UCC24612-1DBVT OMO.#: OMO-UCC24612-1DBVT	Switching Controllers SYNC RECTIFIER FLYBACK
	Mfr.#: 08-55-0102 OMO.#: OMO-08-55-0102	Headers & Wire Housings CRIMP TERM SEL GLD 22-30 AWG
	Mfr.#: OPA2376QDGKRQ1 OMO.#: OMO-OPA2376QDGKRQ1	Precision Amplifiers Low Noise, Low Quiescent Current, Precision Operational Amplifier e-trim/trade 8-VSSOP -40 to 125
	Mfr.#: OPA2376QDGKRQ1 OMO.#: OMO-OPA2376QDGKRQ1-TEXAS-INSTRUMENTS	Precision Amplifiers Low Noise, Low Quiescent Current, Precision Operational Amplifier e-trim/trade 8-VSSOP -40 to 125
	Mfr.#: ATSAMC21E18A-MUT OMO.#: OMO-ATSAMC21E18A-MUT-MICROCHIP-TECHNOLOGY	Microcontrollers - MCU ARM Microcontrollers - MCU Cortex-M0+, 256KB FLASH,32KB SRAM - 32QFN,85C TEMP, GREEN, 5V, 48MHZ, T&R
	Mfr.#: 08-55-0102 OMO.#: OMO-08-55-0102-MOLEX	Headers & Wire Housings CRIMP TERM SEL GLD 22-30 AWG
	Mfr.#: UCC24612-1DBVT OMO.#: OMO-UCC24612-1DBVT-TEXAS-INSTRUMENTS	HIGH-FREQUENCY MULTI-MODE SYNCHR
	Mfr.#: UCC5350MCDR OMO.#: OMO-UCC5350MCDR-TEXAS-INSTRUMENTS	DGTL ISO 3KV 1CH GATE DRVR 8SOIC

उपलब्धता

स्टक:: Available
अर्डर मा:: 1984
मात्रा प्रविष्ट गर्नुहोस्:

IPB110N20N3LFATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ६.९६~~; ~~US$ ६.९६~~

10: ~~US$ ६.२९~~; ~~US$ ६२.९०~~

25: ~~US$ ६.००~~; ~~US$ १५०.००~~

100: ~~US$ ५.२१~~; ~~US$ ५२१.००~~

250: ~~US$ ४.९७~~; ~~US$ १ २४२.५०~~

500: ~~US$ ४.५३~~; ~~US$ २ २६५.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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IPB110N20N3LFATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes