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SIE810DF-T1-GE3

SIE810DF-T1-GE3
Mfr. #:
SIE810DF-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 20V 236A 125W 1.4mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIE810DF-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIE810DF-T1-GE3 DatasheetSIE810DF-T1-GE3 Datasheet (P4-P6)SIE810DF-T1-GE3 Datasheet (P7-P9)SIE810DF-T1-GE3 Datasheet (P10)
ECAD Model:
थप जानकारी:
SIE810DF-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PolarPAK-10
व्यापार नाम:
TrenchFET, PolarPAK
प्याकेजिङ:
रील
उचाइ:
0.8 mm
लम्बाइ:
6.15 mm
शृङ्खला:
SIE
चौडाइ:
5.16 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SIE810DF-GE3
Tags
SIE81, SIE8, SIE
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R
***ure Electronics
MOSFET 20V 236A 125W 1.4mohm @ 10V
***i-Key
MOSFET N-CH 20V 60A POLARPAK
***
N-CHANNEL 20-V (D-S) MOSFET
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
भाग # Mfg। विवरण स्टक मूल्य
SIE810DF-T1-GE3
DISTI # SIE810DF-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 20V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.8141
SIE810DF-T1-GE3
DISTI # SIE810DF-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE810DF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE810DF-T1-GE3
DISTI # 781-SIE810DF-GE3		Vishay IntertechnologiesMOSFET 20V 236A 125W 1.4mohm @ 10V
RoHS: Compliant		0
  • 1:$3.4800
  • 10:$2.8800
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0900
  • 1000:$2.0800
  • 3000:$2.0700
SIE810DF-T1-GE3Vishay IntertechnologiesMOSFET 20V 236A 125W 1.4mohm @ 10VAmericas -
    छवि भाग # विवरण
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3

    		 MOSFET 20V 60A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3

    		 MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1500
    मात्रा प्रविष्ट गर्नुहोस्:
    SIE810DF-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३.४७
    US$ ३.४७
    10
    US$ २.८७
    US$ २८.७०
    100
    US$ २.३६
    US$ २३६.००
    250
    US$ २.२९
    US$ ५७२.५०
    500
    US$ २.०५
    US$ १ ०२५.००
    1000
    US$ १.७३
    US$ १ ७३०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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