SIE810DF-T1-GE3

SIE810DF-T1-GE3
Mfr. #:
SIE810DF-T1-GE3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIE810DF-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIE810DF-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
SIE81, SIE8, SIE
Service Guarantees

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R
***ure Electronics
MOSFET 20V 236A 125W 1.4mohm @ 10V
***i-Key
MOSFET N-CH 20V 60A POLARPAK
***
N-CHANNEL 20-V (D-S) MOSFET
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
भाग # Mfg। विवरण स्टक मूल्य
SIE810DF-T1-GE3
DISTI # SIE810DF-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.8141
SIE810DF-T1-GE3
DISTI # SIE810DF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE810DF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE810DF-T1-GE3
DISTI # 781-SIE810DF-GE3
Vishay IntertechnologiesMOSFET 20V 236A 125W 1.4mohm @ 10V
RoHS: Compliant
0
  • 1:$3.4800
  • 10:$2.8800
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0900
  • 1000:$2.0800
  • 3000:$2.0700
SIE810DF-T1-GE3Vishay IntertechnologiesMOSFET 20V 236A 125W 1.4mohm @ 10VAmericas -
    छवि भाग # विवरण
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3

    MOSFET 20V 60A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3

    MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    4500
    मात्रा प्रविष्ट गर्नुहोस्:
    SIE810DF-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.२४
    US$ २.२४
    10
    US$ २.१२
    US$ २१.२३
    100
    US$ २.०१
    US$ २०१.१५
    500
    US$ १.९०
    US$ ९४९.९०
    1000
    US$ १.७९
    US$ १ ७८८.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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