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PGA26E19BA

PGA26E19BA
Mfr. #:
PGA26E19BA
निर्माता:
Panasonic
विवरण:
MOSFET MOSFET 600VDC 190mohm X-GaN
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
PGA26E19BA डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
PGA26E19BA थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Panasonic
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
RoHS
विवरणहरू
च्यानलहरूको संख्या
1 Channel
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज
4 V
Qg - गेट चार्ज
120 nC
प्रविधि
सि
च्यानल मोड
वृद्धि
ब्रान्ड
Panasonic
कन्फिगरेसन
1 N-Channel
विकास किट
-
पतन समय
-
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम
-
न्यूनतम परिचालन तापमान
- 55 C
उठ्ने समय
-
शृङ्खला
GaN-FET
ट्रान्जिस्टर प्रकार
1 N-Channel
सामान्य टर्न-अफ ढिलाइ समय
-
सामान्य टर्न-अन ढिलाइ समय
-
Tags
PGA26E1, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
भाग # Mfg। विवरण स्टक मूल्य
PGA26E19BA
DISTI # 667-PGA26E19BA		Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$18.2900
  • 10:$17.0700
  • 25:$16.2100
PGA26E19BA-SWEVB008
DISTI # 667-PGA26E19BASWEV8		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant		19
  • 1:$400.0000
PGA26E19BA-SWEVB006
DISTI # 667-PGA26E19BASWEVB6		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN Chopper EVB
RoHS: Compliant		3
  • 1:$300.0000
PGA26E19BA-DB001
DISTI # 667-PGA26E19BADB001		Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$45.0000
छवि भाग # विवरण
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

 MOSFET MOSFET 600VDC 190mohm X-GaN
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA

 MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E07-DB001

Mfr.#: PGA26E07-DB001

OMO.#: OMO-PGA26E07-DB001-1190

 नयाँ र मौलिक
PGA26E07-SWEVB008

Mfr.#: PGA26E07-SWEVB008

OMO.#: OMO-PGA26E07-SWEVB008-1190

 नयाँ र मौलिक
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA-1190

 MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E19-DB001

Mfr.#: PGA26E19-DB001

OMO.#: OMO-PGA26E19-DB001-1190

 नयाँ र मौलिक
PGA26E19-SWEVB008

Mfr.#: PGA26E19-SWEVB008

OMO.#: OMO-PGA26E19-SWEVB008-1190

 नयाँ र मौलिक
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA-1190

 MOSFET MOSFET 600VDC 190mohm X-GaN
उपलब्धता
स्टक:
Available
अर्डर मा:
3000
मात्रा प्रविष्ट गर्नुहोस्:
PGA26E19BA को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २४.३२
US$ २४.३२
10
US$ २३.१०
US$ २३०.९९
100
US$ २१.८८
US$ २ १८८.३५
500
US$ २०.६७
US$ १० ३३३.९०
1000
US$ १९.४५
US$ १९ ४५२.००
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