PGA26E07BA

PGA26E07BA
Mfr. #:
PGA26E07BA
निर्माता:
Panasonic
विवरण:
MOSFET MOSFET 600VDC 70mohm X-GaN
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
PGA26E07BA डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
PGA26E07BA थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
PGA26E0, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
भाग # Mfg। विवरण स्टक मूल्य
PGA26E07BA
DISTI # 667-PGA26E07BA
Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 70mohm X-GaN
RoHS: Compliant
29
  • 1:$35.4300
  • 10:$33.4600
  • 25:$31.4900
PGA26E07BA-SWEVB008
DISTI # 667-PGA26E07BASWEV8
Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant
15
  • 1:$400.0000
PGA26E07BA-SWEVB006
DISTI # 667-PGA26E07BASWEVB6
Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN Chopper EVB
RoHS: Compliant
2
  • 1:$375.0000
PGA26E07BA-DB001
DISTI # 667-PGA26E07BADAB001
Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 70mohm X-GaN
RoHS: Compliant
0
  • 1:$55.0000
छवि भाग # विवरण
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

MOSFET MOSFET 600VDC 190mohm X-GaN
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA

MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E07-DB001

Mfr.#: PGA26E07-DB001

OMO.#: OMO-PGA26E07-DB001-1190

नयाँ र मौलिक
PGA26E07-SWEVB008

Mfr.#: PGA26E07-SWEVB008

OMO.#: OMO-PGA26E07-SWEVB008-1190

नयाँ र मौलिक
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA-1190

MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E19-DB001

Mfr.#: PGA26E19-DB001

OMO.#: OMO-PGA26E19-DB001-1190

नयाँ र मौलिक
PGA26E19-SWEVB008

Mfr.#: PGA26E19-SWEVB008

OMO.#: OMO-PGA26E19-SWEVB008-1190

नयाँ र मौलिक
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA-1190

MOSFET MOSFET 600VDC 190mohm X-GaN
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
PGA26E07BA को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ४७.२४
US$ ४७.२४
10
US$ ४४.८७
US$ ४४८.७३
100
US$ ४२.५१
US$ ४ २५१.१५
500
US$ ४०.१५
US$ २० ०७४.९०
1000
US$ ३७.७९
US$ ३७ ७८८.००
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