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IXTH16N10D2

IXTH16N10D2
Mfr. #:
IXTH16N10D2
निर्माता:
Littelfuse
विवरण:
MOSFET N-CH 100V 16A MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXTH16N10D2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH16N10D2 DatasheetIXTH16N10D2 Datasheet (P4-P5)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
16 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
64 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
225 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
830 W
कन्फिगरेसन:
एकल
च्यानल मोड:
कमी
प्याकेजिङ:
ट्यूब
उत्पादन:
MOSFET
शृङ्खला:
IXTH16N10D2
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
MOSFET
ब्रान्ड:
IXYS
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
11 S
पतन समय:
70 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
43 ns
कारखाना प्याक मात्रा:
30
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
340 ns
सामान्य टर्न-अन ढिलाइ समय:
45 ns
एकाइ वजन:
0.056438 oz
Tags
IXTH16N, IXTH16, IXTH1, IXTH, IXT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***-Wing Technology
MOSFET N-CH 100V 16A TO-247
***ource
Standard Power MOSFET
***(Formerly Allied Electronics)
MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC
***el Electronic
In a Tube of 25, IRFP140NPBF N-Channel MOSFET, 33 A, 100 V HEXFET, 3-Pin TO-247AC Infineon
***ure Electronics
Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:33A; Package / Case:TO-247AC; Power Dissipation Pd:94W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
IRFP4468PBF N-channel MOSFET Transistor, 290 A, 100 V, 3-Pin TO-247AC
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 520 W
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, 100V 290A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:290A; Drain Source Voltage Vds:100V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:290A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:1120A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V
***eco
Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC
***ure Electronics
Single N-Channel 100V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
***klin Elektronik
INFINEON THT MOSFET NFET 100V 42A 36mΩ 175°C TO-247 IRFP150N
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, 39A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
भाग # Mfg। विवरण स्टक मूल्य
IXTH16N10D2
DISTI # IXTH16N10D2-ND		IXYS CorporationMOSFET N-CH 100V 16A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$9.8977
IXTH16N10D2
DISTI # 747-IXTH16N10D2		IXYS CorporationMOSFET N-CH 100V 16A MOSFET
RoHS: Compliant		39
  • 1:$13.5400
  • 10:$12.3100
  • 25:$11.3800
  • 50:$10.4700
  • 100:$10.2100
  • 250:$9.3600
  • 500:$8.5000
  • 1000:$7.7600
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उपलब्धता
स्टक:
61
अर्डर मा:
2044
मात्रा प्रविष्ट गर्नुहोस्:
IXTH16N10D2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १३.५४
US$ १३.५४
10
US$ १२.३१
US$ १२३.१०
25
US$ ९.८९
US$ २४७.२५
50
US$ ९.६२
US$ ४८१.००
100
US$ ९.४९
US$ ९४९.००
250
US$ ९.३६
US$ २ ३४०.००
500
US$ ८.५०
US$ ४ २५०.००
1000
US$ ७.७६
US$ ७ ७६०.००
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