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CSD19532Q5BT

CSD19532Q5BT
Mfr. #:
CSD19532Q5BT
विवरण:
MOSFET 100V, N ch NexFET MOSFETG , single SON5x6, 4.9mOhm 8-VSON-CLIP -55 to 150
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
CSD19532Q5BT डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
CSD19532Q5BT थप जानकारी CSD19532Q5BT Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
टेक्सास उपकरण
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
VSON-Clip-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.9 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.6 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
48 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
3.1 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
NexFET
प्याकेजिङ:
रील
उचाइ:
1 mm
लम्बाइ:
6 mm
शृङ्खला:
CSD19532Q5B
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5 mm
ब्रान्ड:
टेक्सास उपकरण
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
84 S
पतन समय:
6 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
6 ns
कारखाना प्याक मात्रा:
250
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
22 ns
सामान्य टर्न-अन ढिलाइ समय:
7 ns
एकाइ वजन:
0.003714 oz
Tags
CSD19532, CSD1953, CSD19, CSD1, CSD
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm 8-VSON-CLIP -55 to 150
***ical
Trans MOSFET N-CH Si 100V 100A 8-Pin VSON-CLIP EP T/R
***as Instr.
This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
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उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
CSD19532Q5BT को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.५४
US$ २.५४
10
US$ २.१६
US$ २१.६०
100
US$ १.७२
US$ १७२.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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