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CSD19537Q3T

CSD19537Q3T
Mfr. #:
CSD19537Q3T
विवरण:
MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
CSD19537Q3T डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
CSD19537Q3T थप जानकारी CSD19537Q3T Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
टेक्सास उपकरण
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
VSON-CLIP-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
53 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
14.5 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.6 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
16 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
83 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
NexFET
प्याकेजिङ:
रील
उचाइ:
1 mm
लम्बाइ:
3.3 mm
शृङ्खला:
CSD19537Q3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
3.3 mm
ब्रान्ड:
टेक्सास उपकरण
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
45 S
पतन समय:
3 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
3 ns
कारखाना प्याक मात्रा:
250
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
10 ns
सामान्य टर्न-अन ढिलाइ समय:
5 ns
एकाइ वजन:
0.000847 oz
Tags
CSD1953, CSD19, CSD1, CSD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100V, N ch NexFET MOSFET™, single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
***Components
In a Pack of 5, Texas Instruments CSD19537Q3T MOSFET
***ical
Trans MOSFET N-CH Si 100V 50A 8-Pin VSON-CLIP EP T/R
***et Europe
Trans MOSFET N-CH 100V 50A 8-Pin VSON-CLIP T/R
***i-Key
MOSFET N-CH 100V 50A 8VSON
***ark
Mosfet, N-Ch, 100V, 50A, Vson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0121Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 50A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0121ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, N-CH, 100V, 50A, VSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0121ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:83W; Modello Case Transistor:VSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***AS INSTRUMENTS INCORPORATED
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
CSD19537Q3 N-Channel NexFET™ Power MOSFETs
OMO Electronic CSD19537Q3 N-Channel NexFET™ Power MOSFETs are a 100V 12.1mΩ N-Channel NexFET™ power MOSFET that is designed to minimize losses in power conversion applications. This MOSFET features an ultra-low Qg and Qgd with low thermal resistance. It is also avalanche rated and comes in Pb-Free, halogen free RoHS complant SON-8 3.3mmx3.3mm plastic package. Typical applications include primary side isolated converters and motor control.Learn More
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उपलब्धता
स्टक:
15
अर्डर मा:
1998
मात्रा प्रविष्ट गर्नुहोस्:
CSD19537Q3T को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.३६
US$ १.३६
10
US$ १.१६
US$ ११.६०
100
US$ ०.८९
US$ ८९.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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