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STW25NM60ND

STW25NM60ND
Mfr. #:
STW25NM60ND
निर्माता:
STMicroelectronics
विवरण:
MOSFET N-channel 600V, 21A FDMesh II
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STW25NM60ND डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STW25NM60ND थप जानकारी STW25NM60ND Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
21 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
160 mOhms
Vgs - गेट-स्रोत भोल्टेज:
25 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
160 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
20.15 mm
लम्बाइ:
15.75 mm
शृङ्खला:
STB25NM60N
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
पतन समय:
40 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
30 ns
कारखाना प्याक मात्रा:
600
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
50 ns
सामान्य टर्न-अन ढिलाइ समय:
60 ns
एकाइ वजन:
1.340411 oz
Tags
STW25NM60ND, STW25NM60N, STW25NM60, STW25NM6, STW25NM, STW25N, STW25, STW2, STW
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Power Mosfet, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
***ure Electronics
Single N-Channel 600 V 0.16 Ohm 29 nC 160 W Silicon Flange Mount Mosfet TO-247-3
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 600V, 21A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***icroelectronics
N-channel 500 V, 0.090 Ohm, 27 A MDmesh" II Power MOSFET
***r Electronics
Power Field-Effect Transistor, 27A I(D), 500V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 500V, 27A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 27A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package
*** Source Electronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 20A TO-247
***ure Electronics
Single N-Channel 600 V 140 W 60 nC MDmesh Through Hole Mosfet - TO-247-3
***ark
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
***ark
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-247
*** Source Electronics
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 22A TO-247
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,22A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:205W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 23 A, 165 mΩ, TO-247
***ark
SuperFET2 600V 165mohm slow version - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***r Electronics
Power Field-Effect Transistor, 23A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 23A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.
भाग # Mfg। विवरण स्टक मूल्य
STW25NM60ND
DISTI # 497-8455-5-ND		STMicroelectronicsMOSFET N-CH 600V 21A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		562In Stock
  • 510:$5.9078
  • 120:$7.0512
  • 30:$7.8137
  • 1:$9.5300
STW25NM60ND
DISTI # 511-STW25NM60ND		STMicroelectronicsMOSFET N-channel 600V, 21A FDMesh II
RoHS: Compliant		4
  • 1:$8.2500
  • 10:$7.4600
  • 25:$7.1100
  • 100:$6.1700
  • 250:$5.9000
  • 500:$5.3800
STW25NM60ND
DISTI # STW25NM60ND		STMicroelectronicsN-Ch 600V 21A 160W 0,16R TO247
RoHS: Compliant		0
  • 5:€2.6000
  • 30:€2.2000
  • 120:€2.0000
  • 300:€1.9200
STW25NM60ND
DISTI # 2098388		STMicroelectronicsMOSFET, N CH, 600V, 21A, TO 247
RoHS: Compliant		1
  • 1:£6.6300
  • 10:£5.0200
  • 100:£4.6300
  • 250:£4.4600
  • 500:£4.0300
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उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
STW25NM60ND को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ८.२४
US$ ८.२४
10
US$ ७.४५
US$ ७४.५०
25
US$ ७.१०
US$ १७७.५०
100
US$ ६.१६
US$ ६१६.००
250
US$ ५.८९
US$ १ ४७२.५०
500
US$ ५.३७
US$ २ ६८५.००
1000
US$ ४.६७
US$ ४ ६७०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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