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SIHP33N60EF-GE3

SIHP33N60EF-GE3
Mfr. #:
SIHP33N60EF-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs TO-220AB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHP33N60EF-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP33N60EF-GE3 DatasheetSIHP33N60EF-GE3 Datasheet (P4-P6)SIHP33N60EF-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIHP33N60EF-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220AB-3
प्याकेजिङ:
ट्यूब
शृङ्खला:
EF
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
एकाइ वजन:
0.211644 oz
Tags
SIHP33, SIHP3, SIHP, SIH
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N-CH 650V 33A EF Series Power MOSFET with Fast Body Diode in TO-220
***ical
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB
***et
Trans MOSFET N-CH 600V 33A 3-Pin TO-220AB
***Components
MOSFET 600V 33A W/FAST DIODE TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 33A, TO-220AB-3
***i-Key
MOSFET N-CH 600V 33A TO-220-3
***C
MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
***et Europe
MOS Power Transistors HV (>= 200V)
***
N-CH 600V T0-220
***nell
MOSFET, CANALE N, 600V, 33A, TO-220AB-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:33A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.085ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:278W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
भाग # Mfg। विवरण स्टक मूल्य
SIHP33N60EF-GE3
DISTI # SIHP33N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$3.7868
  • 500:$4.3478
  • 100:$5.1893
  • 10:$6.3110
  • 1:$7.0100
SIHP33N60EF-GE3
DISTI # SIHP33N60EF-GE3		Vishay IntertechnologiesMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: SIHP33N60EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.6900
  • 2000:$3.5900
  • 4000:$3.3900
  • 6000:$3.2900
  • 10000:$3.1900
SIHP33N60EF-GE3
DISTI # 31Y6763		Vishay IntertechnologiesMOS Power Transistors HV (>= 200V) - Bulk (Alt: 31Y6763)
RoHS: Not Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$6.3800
  • 10:$5.7400
  • 25:$5.4900
  • 50:$5.2300
  • 100:$4.7200
  • 250:$4.3400
  • 500:$3.9600
SIHP33N60EF-GE3
DISTI # 31Y6763		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes39
  • 1:$6.3800
  • 10:$5.7400
  • 25:$5.4900
  • 50:$5.2300
  • 100:$4.7200
  • 250:$4.3400
  • 500:$3.9600
SIHP33N60EF-GE3
DISTI # 78-SIHP33N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant		1273
  • 1:$6.3800
  • 10:$5.7400
  • 50:$5.2300
  • 100:$4.7200
  • 250:$4.3400
  • 500:$3.9600
SIHP33N60EF-GE3Vishay Siliconix 500
    SIHP33N60EF-GE3
    DISTI # 9034487P    		Vishay IntertechnologiesMOSFET 600V 33A W/FAST DIODE TO-220AB, TU20
    • 2:£5.0550
    SIHP33N60EF-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		Americas -
      छवि भाग # विवरण
      RC0402FR-073K9L

      Mfr.#: RC0402FR-073K9L

      OMO.#: OMO-RC0402FR-073K9L

      		 Thick Film Resistors - SMD 3.9K OHM 1%
      RC0603FR-07390RL

      Mfr.#: RC0603FR-07390RL

      OMO.#: OMO-RC0603FR-07390RL-YAGEO

      		 Thick Film Resistors - SMD 390 OHM 1%
      RC0402FR-073K9L

      Mfr.#: RC0402FR-073K9L

      OMO.#: OMO-RC0402FR-073K9L-YAGEO

      		 Thick Film Resistors - SMD 3.9K OHM 1%
      उपलब्धता
      स्टक:
      521
      अर्डर मा:
      2504
      मात्रा प्रविष्ट गर्नुहोस्:
      SIHP33N60EF-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ७.२७
      US$ ७.२७
      10
      US$ ६.५६
      US$ ६५.६०
      50
      US$ ५.७९
      US$ २८९.५०
      100
      US$ ५.४४
      US$ ५४४.००
      250
      US$ ४.८९
      US$ १ २२२.५०
      500
      US$ ४.६०
      US$ २ ३००.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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