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SIR872DP-T1-GE3

SIR872DP-T1-GE3
Mfr. #:
SIR872DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR872DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR872DP-T1-GE3 DatasheetSIR872DP-T1-GE3 Datasheet (P4-P6)SIR872DP-T1-GE3 Datasheet (P7-P9)SIR872DP-T1-GE3 Datasheet (P10-P12)SIR872DP-T1-GE3 Datasheet (P13)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
व्यापार नाम:
TrenchFET, PowerPAK
उचाइ:
1.04 mm
लम्बाइ:
6.15 mm
शृङ्खला:
SIR
चौडाइ:
5.15 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
एकाइ वजन:
0.017870 oz
Tags
SIR872, SIR87, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR872DP Series N-Channel 150 V 0.0200 Ohm 104 W SMT Mosfet - PowerPAK SO-8
***et
Trans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 53.7A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 150V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:53.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0148ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
भाग # Mfg। विवरण स्टक मूल्य
SIR872DP-T1-GE3
DISTI # V99:2348_09216043		Vishay IntertechnologiesTrans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO EP
RoHS: Compliant		495
  • 3000:$1.2918
  • 1000:$1.4189
  • 500:$1.6697
  • 100:$2.0524
  • 10:$2.4405
  • 1:$2.6555
SIR872DP-T1-GE3
DISTI # SIR872DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 150V 53.7A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		137In Stock
  • 1000:$1.5170
  • 500:$1.8309
  • 100:$2.3540
  • 10:$2.9290
  • 1:$3.2400
SIR872DP-T1-GE3
DISTI # SIR872DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 150V 53.7A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		137In Stock
  • 1000:$1.5170
  • 500:$1.8309
  • 100:$2.3540
  • 10:$2.9290
  • 1:$3.2400
SIR872DP-T1-GE3
DISTI # SIR872DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 150V 53.7A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.3713
SIR872DP-T1-GE3
DISTI # 30574640		Vishay IntertechnologiesTrans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO EP
RoHS: Compliant		495
  • 100:$2.0524
  • 10:$2.4405
  • 5:$2.6555
SIR872DP-T1-GE3
DISTI # SIR872DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR872DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SIR872DP-T1-GE3
    DISTI # 78-SIR872DP-T1-GE3    		Vishay IntertechnologiesMOSFET 150V 18mOhm@10V 60A N-Ch
    RoHS: Compliant    		0
      SIR872DPT1GE3Vishay Intertechnologies 
      RoHS: Compliant      		Europe - 2550
        SIR872DP-T1-GE3Vishay IntertechnologiesMOSFET 150V 18mOhm@10V 60A N-ChAmericas -
          SIR872DP-T1-GE3
          DISTI # 2283696          		Vishay IntertechnologiesMOSFET, N-CH, 150V, PPAK-SO8
          RoHS: Compliant          		0
          • 1:$4.5500
          • 10:$3.7800
          • 100:$2.9300
          • 500:$2.5700
          • 1000:$2.4600
          • 3000:$2.4400
          SIR872DP-T1-GE3
          DISTI # C1S806001191110          		Vishay IntertechnologiesMOSFETs495
          • 100:$2.0524
          • 10:$2.4405
          • 1:$2.6555
          छवि भाग # विवरण
          SIR872DP-T1-GE3

          Mfr.#: SIR872DP-T1-GE3

          OMO.#: OMO-SIR872DP-T1-GE3

          		 MOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3
          SIR872DP-T1-GE3

          Mfr.#: SIR872DP-T1-GE3

          OMO.#: OMO-SIR872DP-T1-GE3-VISHAY

          		 RF Bipolar Transistors MOSFET 150V 18mOhm@10V 60A N-Ch
          SIR872DP

          Mfr.#: SIR872DP

          OMO.#: OMO-SIR872DP-1190

          		 नयाँ र मौलिक
          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          5500
          मात्रा प्रविष्ट गर्नुहोस्:
          SIR872DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
          सन्दर्भ मूल्य (USD)
          मात्रा
          एकाइ मूल्य
          विस्तार मूल्य
          1
          US$ २.८६
          US$ २.८६
          10
          US$ २.३८
          US$ २३.८०
          100
          US$ १.८४
          US$ १८४.००
          500
          US$ १.६१
          US$ ८०५.००
          1000
          US$ १.३३
          US$ १ ३३०.००
          3000
          US$ १.२४
          US$ ३ ७२०.००
          6000
          US$ १.२०
          US$ ७ २००.००
          9000
          US$ १.१५
          US$ १० ३५०.००
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