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SIHD7N60E-E3

SIHD7N60E-E3
Mfr. #:
SIHD7N60E-E3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHD7N60E-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD7N60E-E3 DatasheetSIHD7N60E-E3 Datasheet (P4-P6)SIHD7N60E-E3 Datasheet (P7-P9)SIHD7N60E-E3 Datasheet (P10)
ECAD Model:
थप जानकारी:
SIHD7N60E-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
7 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
600 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
20 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
78 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
13 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
24 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
भाग # उपनाम:
SIHD7N60E
एकाइ वजन:
0.050717 oz
Tags
SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 7A 3-Pin DPAK
***i-Key
MOSFET N-CH 600V 7A TO-252
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHD7N60E-E3
DISTI # SIHD7N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO-252
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.9623
SIHD7N60E-E3
DISTI # SIHD7N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD7N60E-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9429
  • 6000:$0.9149
  • 12000:$0.8779
  • 18000:$0.8529
  • 30000:$0.8299
SIHD7N60E-GE3
DISTI # 78-SIHD7N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		1088
  • 1:$2.0200
  • 10:$1.6800
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$1.0900
  • 3000:$1.0800
SIHD7N60E-E3
DISTI # 78-SIHD7N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		0
  • 3000:$0.8750
  • 6000:$0.8430
  • 9000:$0.8100
SIHD7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		Americas - 3000
  • 50:$1.2450
  • 100:$1.1020
  • 250:$1.0020
  • 500:$0.9800
  • 1000:$0.9260
छवि भाग # विवरण
SIHD7N60ET1-GE3

Mfr.#: SIHD7N60ET1-GE3

OMO.#: OMO-SIHD7N60ET1-GE3

 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET4-GE3

Mfr.#: SIHD7N60ET4-GE3

OMO.#: OMO-SIHD7N60ET4-GE3

 MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3

 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3

 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3-VISHAY

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-GE3-CUT TAPE

Mfr.#: SIHD7N60E-GE3-CUT TAPE

OMO.#: OMO-SIHD7N60E-GE3-CUT-TAPE-1190

 नयाँ र मौलिक
SIHD7N60E

Mfr.#: SIHD7N60E

OMO.#: OMO-SIHD7N60E-1190

 नयाँ र मौलिक
SIHD7N60E-GE3

Mfr.#: SIHD7N60E-GE3

OMO.#: OMO-SIHD7N60E-GE3-VISHAY

 MOSFET N-CH 600V 7A TO-252
SIHD7N60EGE3

Mfr.#: SIHD7N60EGE3

OMO.#: OMO-SIHD7N60EGE3-1190

 Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3-VISHAY

 MOSFET N-CH 600V 7A TO252AA
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
SIHD7N60E-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
3000
US$ ०.८८
US$ २ ६२५.००
6000
US$ ०.८४
US$ ५ ०५८.००
9000
US$ ०.८१
US$ ७ २९०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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