SIHD7N60E-E3

SIHD7N60E-E3
Mfr. #:
SIHD7N60E-E3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHD7N60E-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHD7N60E-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 7A 3-Pin DPAK
***i-Key
MOSFET N-CH 600V 7A TO-252
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHD7N60E-E3
DISTI # SIHD7N60E-E3-ND
Vishay SiliconixMOSFET N-CH 600V 7A TO-252
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.9623
SIHD7N60E-E3
DISTI # SIHD7N60E-E3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD7N60E-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.9429
  • 6000:$0.9149
  • 12000:$0.8779
  • 18000:$0.8529
  • 30000:$0.8299
SIHD7N60E-GE3
DISTI # 78-SIHD7N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant
1088
  • 1:$2.0200
  • 10:$1.6800
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$1.0900
  • 3000:$1.0800
SIHD7N60E-E3
DISTI # 78-SIHD7N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant
0
  • 3000:$0.8750
  • 6000:$0.8430
  • 9000:$0.8100
SIHD7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant
Americas - 3000
  • 50:$1.2450
  • 100:$1.1020
  • 250:$1.0020
  • 500:$0.9800
  • 1000:$0.9260
छवि भाग # विवरण
SIHD7N60ET4-GE3

Mfr.#: SIHD7N60ET4-GE3

OMO.#: OMO-SIHD7N60ET4-GE3

MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3

MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3

MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3

MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60ETL-GE3

Mfr.#: SIHD7N60ETL-GE3

OMO.#: OMO-SIHD7N60ETL-GE3-317

RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3-VISHAY

RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3-317

RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E

Mfr.#: SIHD7N60E

OMO.#: OMO-SIHD7N60E-1190

नयाँ र मौलिक
SIHD7N60E-GE3

Mfr.#: SIHD7N60E-GE3

OMO.#: OMO-SIHD7N60E-GE3-VISHAY

MOSFET N-CH 600V 7A TO-252
SIHD7N60ET4-GE3

Mfr.#: SIHD7N60ET4-GE3

OMO.#: OMO-SIHD7N60ET4-GE3-VISHAY

MOSFET N-CH 600V 7A TO252AA
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
SIHD7N60E-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.२२
US$ १.२२
10
US$ १.१५
US$ ११.५४
100
US$ १.०९
US$ १०९.३५
500
US$ १.०३
US$ ५१६.४०
1000
US$ ०.९७
US$ ९७२.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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