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IPI029N06NAKSA1

IPI029N06NAKSA1
Mfr. #:
IPI029N06NAKSA1
निर्माता:
Infineon Technologies
विवरण:
Darlington Transistors MOSFET N-Ch 60V 100A I2PAK-3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPI029N06NAKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPI029N06NAKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Infineon टेक्नोलोजीहरू
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
IPI029N06
प्याकेजिङ
ट्यूब
अंश-उपनामहरू
IPI029N06N IPI029N06NXK SP000962134
एकाइ - वजन
0.084199 oz
माउन्टिङ-शैली
प्वाल मार्फत
ट्रेडनेम
OptiMOS
प्याकेज-केस
TO-262-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
136 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
8 ns
उदय-समय
15 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
100 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
60 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
2.8 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
2.9 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
30 ns
सामान्य-टर्न-अन-डिले-समय
17 ns
Qg-गेट-चार्ज
56 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
160 S
Tags
IPI02, IPI0, IPI
Service Guarantees

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
***p One Stop Global
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262
***et
Trans MOSFET N-CH 60V 100A 3-Pin TO-262 Tube
***i-Key
MOSFET N-CH 60V 24A TO262-3
***ronik
N-CH 60V 100A 2,9mOhm TO262-3
***ark
Mosfet, N-Ch, 60V, 100A, To-262; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 60V, 100A, TO-262; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):2.8V; Tensione di Soglia Vgs:10V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPI029N06NAKSA1
DISTI # 29709233		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		1000
  • 500:$1.0464
  • 100:$1.1904
  • 15:$1.4880
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1-ND		Infineon Technologies AGMOSFET N-CH 60V 24A TO262-3
RoHS: Compliant
Min Qty: 1
Container: Tube		417In Stock
  • 1000:$0.9870
  • 500:$1.1912
  • 100:$1.5315
  • 10:$1.9060
  • 1:$2.1100
IPI029N06NAKSA1
DISTI # C1S322000334748		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		1000
  • 1000:$0.9020
  • 500:$1.1700
  • 100:$1.2800
  • 25:$1.5600
  • 5:$1.9200
IPI029N06NAKSA1
DISTI # SP000962134		Infineon Technologies AGMV POWER MOS (Alt: SP000962134)
RoHS: Compliant
Min Qty: 1		Europe - 56000
  • 1:€1.2629
  • 10:€0.9849
  • 25:€0.8799
  • 50:€0.8009
  • 100:€0.7769
  • 500:€0.7609
  • 1000:€0.7509
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1		Infineon Technologies AGMV POWER MOS - Rail/Tube (Alt: IPI029N06NAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$0.7129
  • 1000:$0.6869
  • 2000:$0.6619
  • 3000:$0.6399
  • 5000:$0.6279
IPI029N06NAKSA1
DISTI # 34AC1699		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:2.8V,Threshold Voltage Vgs:10V,Power RoHS Compliant: Yes459
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
IPI029N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant		20868
  • 1000:$1.1200
  • 500:$1.1800
  • 100:$1.2300
  • 25:$1.2800
  • 1:$1.3800
IPI029N06N
DISTI # 726-IPI029N06N		Infineon Technologies AGMOSFET N-Ch 60V 100A I2PAK-3
RoHS: Compliant		485
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
IPI029N06NAKSA1
DISTI # 726-IPI029N06NAKSA1		Infineon Technologies AGMOSFET N-Ch 60V 100A I2PAK-3
RoHS: Compliant		315
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
IPI029N06NAKSA1
DISTI # 2781091		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262
RoHS: Compliant		459
  • 1:£1.9300
  • 10:£1.5300
  • 100:£1.2300
  • 250:£1.0900
  • 500:£0.9560
IPI029N06NAKSA1
DISTI # 2781091		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262
RoHS: Compliant		459
  • 1:$3.4000
  • 10:$2.9600
  • 100:$2.4100
  • 250:$2.0400
  • 500:$1.7600
  • 1000:$1.6700
IPI029N06NAKSA1
DISTI # XSKDRABV0021253		INF 
RoHS: Compliant		500
  • 500:$1.4600
छवि भाग # विवरण
IPI029N06N

Mfr.#: IPI029N06N

OMO.#: OMO-IPI029N06N

 MOSFET N-Ch 60V 100A I2PAK-3
IPI029N06NAKSA1

Mfr.#: IPI029N06NAKSA1

OMO.#: OMO-IPI029N06NAKSA1

 MOSFET N-Ch 60V 100A I2PAK-3
IPI029N06N

Mfr.#: IPI029N06N

OMO.#: OMO-IPI029N06N-1190

 MOSFET N-Ch 60V 100A I2PAK-3
IPI029N06NAKSA1

Mfr.#: IPI029N06NAKSA1

OMO.#: OMO-IPI029N06NAKSA1-INFINEON-TECHNOLOGIES

 Darlington Transistors MOSFET N-Ch 60V 100A I2PAK-3
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
IPI029N06NAKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.९४
US$ ०.९४
10
US$ ०.८९
US$ ८.९५
100
US$ ०.८५
US$ ८४.७७
500
US$ ०.८०
US$ ४००.३०
1000
US$ ०.७५
US$ ७५३.५०
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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