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IPI029N06N

IPI029N06N
Mfr. #:
IPI029N06N
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 60V 100A I2PAK-3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPI029N06N डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-262-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.7 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
66 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
136 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
ट्यूब
उचाइ:
9.45 mm
लम्बाइ:
10.2 mm
शृङ्खला:
OptiMOS 5
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.5 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
80 S
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
15 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
30 ns
सामान्य टर्न-अन ढिलाइ समय:
17 ns
भाग # उपनाम:
IPI029N06NAKSA1 IPI29N6NXK SP000962134
एकाइ वजन:
0.084199 oz
Tags
IPI02, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
IPI029N06NAKSA1
DISTI # 29709233		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		1000
  • 500:$0.6904
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1-ND		Infineon Technologies AGMOSFET N-CH 60V 24A TO262-3
RoHS: Compliant
Min Qty: 1
Container: Tube		407In Stock
  • 5000:$0.8447
  • 2500:$0.8771
  • 500:$1.1370
  • 100:$1.3839
  • 25:$1.6244
  • 10:$1.7220
  • 1:$1.9200
IPI029N06NAKSA1
DISTI # V36:1790_06382952		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		0
  • 500000:$0.7208
  • 250000:$0.7234
  • 50000:$0.9403
  • 5000:$1.3170
  • 500:$1.3800
IPI029N06NAKSA1
DISTI # SP000962134		Infineon Technologies AGMV POWER MOS (Alt: SP000962134)
RoHS: Compliant
Min Qty: 50		Europe - 56000
  • 500:€0.7179
  • 300:€0.7659
  • 200:€0.8419
  • 100:€0.9419
  • 50:€1.2069
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1		Infineon Technologies AGMV POWER MOS - Rail/Tube (Alt: IPI029N06NAKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.6279
  • 5000:$0.6399
  • 3000:$0.6619
  • 2000:$0.6869
  • 1000:$0.7129
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1		Infineon Technologies AGMV POWER MOS - Bulk (Alt: IPI029N06NAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Bulk		Americas - 0
  • 5000:$0.6349
  • 2500:$0.6459
  • 1500:$0.6689
  • 1000:$0.6939
  • 500:$0.7199
IPI029N06NAKSA1
DISTI # 34AC1699		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:2.8V,Threshold Voltage Vgs:10V,Power RoHS Compliant: Yes407
  • 5000:$0.8130
  • 2500:$0.8440
  • 1000:$0.9070
  • 500:$1.0900
  • 100:$1.2400
  • 10:$1.5600
  • 1:$1.8400
IPI029N06N
DISTI # 726-IPI029N06N		Infineon Technologies AGMOSFET N-Ch 60V 100A I2PAK-3
RoHS: Compliant		422
  • 1:$1.8200
  • 10:$1.5400
  • 100:$1.2300
  • 500:$1.0800
  • 1000:$0.8980
  • 2500:$0.8360
  • 5000:$0.8050
  • 10000:$0.7740
IPI029N06NAKSA1
DISTI # 726-IPI029N06NAKSA1		Infineon Technologies AGMOSFET N-Ch 60V 100A I2PAK-3
RoHS: Compliant		301
  • 1:$1.8200
  • 10:$1.5400
  • 100:$1.2300
  • 500:$1.0800
  • 1000:$0.8980
  • 2500:$0.8360
  • 5000:$0.8050
  • 10000:$0.7740
IPI029N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant		20868
  • 1000:$0.6600
  • 500:$0.6900
  • 100:$0.7200
  • 25:$0.7500
  • 1:$0.8100
IPI029N06NAKSA1
DISTI # XSKDRABV0021253		Infineon Technologies AGPowerField-EffectTransistor,50AI(D),60V,0.0088ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-252AA
RoHS: Compliant		45000 in Stock0 on Order
  • 45000:$0.9667
  • 500:$1.0400
IPI029N06NAKSA1
DISTI # 2781091		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262
RoHS: Compliant		407
  • 1000:$1.5200
  • 500:$1.6100
  • 250:$1.8600
  • 100:$2.2000
  • 10:$2.7000
  • 1:$3.1000
IPI029N06NAKSA1
DISTI # 2781091		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262407
  • 500:£0.8320
  • 250:£0.8880
  • 100:£0.9440
  • 10:£1.2200
  • 1:£1.6000
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उपलब्धता
स्टक:
422
अर्डर मा:
2405
मात्रा प्रविष्ट गर्नुहोस्:
IPI029N06N को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.८२
US$ १.८२
10
US$ १.५४
US$ १५.४०
100
US$ १.२३
US$ १२३.००
500
US$ १.०८
US$ ५४०.००
1000
US$ ०.९०
US$ ८९८.००
2500
US$ ०.८४
US$ २ ०९०.००
5000
US$ ०.८०
US$ ४ ०२५.००
10000
US$ ०.७७
US$ ७ ७४०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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