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HGT1S12N60A4DS

HGT1S12N60A4DS
Mfr. #:
HGT1S12N60A4DS
निर्माता:
ON Semiconductor / Fairchild
विवरण:
IGBT Transistors 12A 600V N-Ch
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
HGT1S12N60A4DS डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
E
प्रविधि:
सि
प्याकेज / केस:
TO-263AB-3
माउन्टिङ शैली:
SMD/SMT
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
600 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2.7 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
54 A
Pd - शक्ति अपव्यय:
167 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
HGT1S12N60A4DS
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
54 A
उचाइ:
4.83 mm
लम्बाइ:
10.67 mm
चौडाइ:
9.65 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
निरन्तर कलेक्टर वर्तमान:
60 A
गेट-एमिटर चुहावट वर्तमान:
+/- 250 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
800
उपश्रेणी:
IGBTs
भाग # उपनाम:
HGT1S12N60A4DS_NL
एकाइ वजन:
0.046296 oz
Tags
HGT1S12N60A4D, HGT1S12N60A, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) D2PAK Rail
***ure Electronics
HGT1S12N60A4DS Series 600 V 54 A SMT N-Channel IGBT - TO-263AB
***ter Electronics
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfas
***et Europe
Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail
***et
PWR IGBT 12A,600V,SMPS SERIES N-CH W/DIODE TO-263AB
***i-Key
IGBT SMPS N-CH 600V D2PAK
***ser
IGBTs 12A, 600V, N-Ch
***Semiconductor
600V, SMPS IGBT
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:167W; Package/Case:TO-263AB ;RoHS Compliant: Yes
***rchild Semiconductor
The HGT1S12N60A4DS combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
भाग # Mfg। विवरण स्टक मूल्य
HGT1S12N60A4DS
DISTI # 28995997		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(2+Tab) D2PAK Rail8000
  • 800:$3.4971
HGT1S12N60A4DS
DISTI # HGT1S12N60A4DS-ND		ON SemiconductorIGBT 600V 54A 167W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tube		Limited Supply - Call
  • 800:$3.2713
HGT1S12N60A4DS
DISTI # HGT1S12N60A4DS		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail (Alt: HGT1S12N60A4DS)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.8900
  • 500:€1.9900
  • 100:€2.0900
  • 50:€2.1900
  • 25:€2.2900
  • 10:€2.3900
  • 1:€2.5900
HGT1S12N60A4DS
DISTI # HGT1S12N60A4DS		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Bulk (Alt: HGT1S12N60A4DS)
RoHS: Compliant
Min Qty: 92
Container: Bulk		Americas - 0
  • 920:$3.2900
  • 276:$3.3900
  • 460:$3.3900
  • 92:$3.4900
  • 184:$3.4900
HGT1S12N60A4DS
DISTI # HGT1S12N60A4DS		ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S12N60A4DS)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 4800:$2.4900
  • 8000:$2.4900
  • 800:$2.5900
  • 1600:$2.5900
  • 3200:$2.5900
HGT1S12N60A4DS
DISTI # 95B2571		ON SemiconductorSINGLE IGBT, 600V, 54A,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes0
  • 500:$2.4400
  • 250:$2.5200
  • 100:$3.0100
  • 50:$3.4800
  • 25:$3.7000
  • 10:$4.2300
  • 1:$4.8800
HGT1S12N60A4DS
DISTI # 512-HGT1S12N60A4DS		ON SemiconductorIGBT Transistors 12A 600V N-Ch
RoHS: Compliant		0
    HGT1S12N60A4DSFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    RoHS: Compliant    		2395
    • 1000:$3.5800
    • 500:$3.7700
    • 100:$3.9200
    • 25:$4.0900
    • 1:$4.4100
    छवि भाग # विवरण
    HGT1S12N60A4S9A

    Mfr.#: HGT1S12N60A4S9A

    OMO.#: OMO-HGT1S12N60A4S9A

    		 IGBT Transistors 600V N-Channel IGBT SMPS Series
    HGT1S12N60A4DS

    Mfr.#: HGT1S12N60A4DS

    OMO.#: OMO-HGT1S12N60A4DS

    		 IGBT Transistors 12A 600V N-Ch
    HGT1S12N60A4DS

    Mfr.#: HGT1S12N60A4DS

    OMO.#: OMO-HGT1S12N60A4DS-ON-SEMICONDUCTOR

    		 IGBT 600V 54A 167W D2PAK
    HGT1S12N60A4S9A

    Mfr.#: HGT1S12N60A4S9A

    OMO.#: OMO-HGT1S12N60A4S9A-ON-SEMICONDUCTOR

    		 IGBT 600V 54A 167W TO263AB
    HGT1S12N60B3D

    Mfr.#: HGT1S12N60B3D

    OMO.#: OMO-HGT1S12N60B3D-1190

    		 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
    HGT1S12N60B3DS

    Mfr.#: HGT1S12N60B3DS

    OMO.#: OMO-HGT1S12N60B3DS-1190

    		 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    HGT1S12N60B3G

    Mfr.#: HGT1S12N60B3G

    OMO.#: OMO-HGT1S12N60B3G-1190

    		 नयाँ र मौलिक
    HGT1S12N60C3DS9A

    Mfr.#: HGT1S12N60C3DS9A

    OMO.#: OMO-HGT1S12N60C3DS9A-1190

    		 नयाँ र मौलिक
    HGT1S12N60C3DST

    Mfr.#: HGT1S12N60C3DST

    OMO.#: OMO-HGT1S12N60C3DST-1190

    		 नयाँ र मौलिक
    HGT1S12N60C3S9AR4501

    Mfr.#: HGT1S12N60C3S9AR4501

    OMO.#: OMO-HGT1S12N60C3S9AR4501-1190

    		 नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    2500
    मात्रा प्रविष्ट गर्नुहोस्:
    HGT1S12N60A4DS को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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