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SIHU4N80AE-GE3

SIHU4N80AE-GE3
Mfr. #:
SIHU4N80AE-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET Nch 800V Vds 30V Vgs TO-251
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHU4N80AE-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHU4N80AE-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
800 V
आईडी - निरन्तर ड्रेन वर्तमान:
4.3 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.27 Ohms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
32 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
69 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
1.5 S
पतन समय:
20 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
7 ns
कारखाना प्याक मात्रा:
75
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
26 ns
सामान्य टर्न-अन ढिलाइ समय:
12 ns
Tags
SIHU, SIH
Service Guarantees

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
छवि भाग # विवरण
SIHU4N80E-GE3

Mfr.#: SIHU4N80E-GE3

OMO.#: OMO-SIHU4N80E-GE3

 MOSFET 800V Vds 30V Vgs IPAK (TO-251)
SIHU4N80AE-GE3

Mfr.#: SIHU4N80AE-GE3

OMO.#: OMO-SIHU4N80AE-GE3

 MOSFET Nch 800V Vds 30V Vgs TO-251
SIHU4N80E-GE3

Mfr.#: SIHU4N80E-GE3

OMO.#: OMO-SIHU4N80E-GE3-VISHAY

 MOSFET N-CHAN 800V TO-251
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
SIHU4N80AE-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.६२
US$ १.६२
10
US$ १.३४
US$ १३.४०
100
US$ १.०२
US$ १०२.००
500
US$ ०.८८
US$ ४४२.५०
1000
US$ ०.७०
US$ ६९८.००
2500
US$ ०.६५
US$ १ ६३०.००
5000
US$ ०.६२
US$ ३ ०९५.००
10000
US$ ०.६०
US$ ५ ९६०.००
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