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SIHU4N80E-GE3

SIHU4N80E-GE3
Mfr. #:
SIHU4N80E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 800V Vds 30V Vgs IPAK (TO-251)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHU4N80E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU4N80E-GE3 DatasheetSIHU4N80E-GE3 Datasheet (P4-P6)SIHU4N80E-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SIHU4N80E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
800 V
आईडी - निरन्तर ड्रेन वर्तमान:
4.3 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.1 Ohms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
16 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
69 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
1.5 S
पतन समय:
20 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
7 ns
कारखाना प्याक मात्रा:
75
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
26 ns
सामान्य टर्न-अन ढिलाइ समय:
12 ns
Tags
SIHU, SIH
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
E Series Power MOSFET N-Channel 800V VDS ±30V VGS 4.3A ID 3-Pin TO-251
***ment14 APAC
MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W
***ark
Mosfet, N-Ch, 800V, 4.3A, 150Deg C, 69W; Transistor Polarity:n Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHU4N80E-GE3
DISTI # SIHU4N80E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 800V TO-251
RoHS: Compliant
Min Qty: 1
Container: Tube		3000In Stock
  • 6000:$0.8599
  • 3000:$0.8930
  • 500:$1.1576
  • 100:$1.4090
  • 25:$1.6536
  • 10:$1.7530
  • 1:$1.9500
SIHU4N80E-GE3
DISTI # SIHU4N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET N-Channel 800V VDS ±30V VGS 4.3A ID 3-Pin TO-251 - Tape and Reel (Alt: SIHU4N80E-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.8119
  • 18000:$0.8339
  • 12000:$0.8579
  • 6000:$0.8949
  • 3000:$0.9219
SIHU4N80E-GE3
DISTI # 78AC6526		Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes3000
  • 1000:$0.9280
  • 500:$1.1200
  • 100:$1.2800
  • 50:$1.4100
  • 25:$1.5300
  • 10:$1.6600
  • 1:$1.9900
SIHU4N80E-GE3
DISTI # 78-SIHU4N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		2993
  • 1:$1.9700
  • 10:$1.6400
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9190
SIHU4N80E-GE3
DISTI # 2932937		Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W
RoHS: Compliant		3000
  • 1000:$1.4300
  • 500:$1.5200
  • 250:$1.7800
  • 100:$2.1600
  • 10:$2.7600
  • 1:$3.3400
SIHU4N80E-GE3
DISTI # 2932937		Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W3000
  • 500:£0.8050
  • 250:£0.8630
  • 100:£0.9210
  • 10:£1.2200
  • 1:£1.6200
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OMO.#: OMO-STD14NM50N-STMICROELECTRONICS

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STD4N62K3

Mfr.#: STD4N62K3

OMO.#: OMO-STD4N62K3-STMICROELECTRONICS

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ADG1433YRUZ-REEL7

Mfr.#: ADG1433YRUZ-REEL7

OMO.#: OMO-ADG1433YRUZ-REEL7-ANALOG-DEVICES

 Analog Switch ICs IC -70dB 4 Ohm Triple SPDT iCMOS
LHL08TB152J

Mfr.#: LHL08TB152J

OMO.#: OMO-LHL08TB152J-TAIYO-YUDEN

 Fixed Inductors INDCTR RADIAL STD 1500uH 5%
CURN103-HF

Mfr.#: CURN103-HF

OMO.#: OMO-CURN103-HF-COMCHIP-TECHNOLOGY

 Rectifiers 1.0A 600V Ultra Fast Recovery
उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
SIHU4N80E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.९७
US$ १.९७
10
US$ १.६४
US$ १६.४०
100
US$ १.२७
US$ १२७.००
500
US$ १.११
US$ ५५५.००
1000
US$ ०.९२
US$ ९१९.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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