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STP28NM60ND

STP28NM60ND
Mfr. #:
STP28NM60ND
निर्माता:
STMicroelectronics
विवरण:
MOSFET N-channel 600 V 0 120 Ohm typ 24 A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STP28NM60ND डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STP28NM60ND थप जानकारी STP28NM60ND Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
23 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
150 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
25 V
Qg - गेट चार्ज:
62.5 nC
Pd - शक्ति अपव्यय:
190 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
ट्यूब
शृङ्खला:
STP28NM60ND
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
पतन समय:
27 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
21.5 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
92 ns
सामान्य टर्न-अन ढिलाइ समय:
23.5 ns
एकाइ वजन:
0.011640 oz
Tags
STP28NM, STP28N, STP28, STP2, STP
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
***ure Electronics
Single N-Channel 650 V 0.15 O 190 W Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 23A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220FP package
***ure Electronics
N-Channel 600 V 0.125 Ohm 45.5 nC MDmesh II Plus™ Power Mosfet - TO-220FP
***p One Stop
Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) TO-220FP Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 600V 26A MDmeshIIPlusTO220FP
***ark
MOSFET, N-CH, 600V, 26A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package
***ure Electronics
Single N-Channel 650 V 0.125 O 190 W Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N-CH, 600V, 26A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
***ure Electronics
N-Channel 600 V 23 A 35 W Through Hole FDmesh™ II Power MOSFET - TO-220FP
***r Electronics
Power Field-Effect Transistor, 23A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
IPA60R125CP Series 650 V 25 A 0.125 Ohm CoolMos Power Transistor - TO-220-3
***p One Stop
Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
25 A 600 V 0.125 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:650V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:25A; Package / Case:TO-220; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***p One Stop Global
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E Series N Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP
***nell
MOSFET, N-CH, 600V, 21A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:37W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***et
Trans MOSFET N-CH 600V 28A 3-Pin TO-220AB
*** Electronics
MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET
*** International
MOSFET N-CH 600V 28A TO-220-3
***or
MOSFET N-CH 600V 28A TO220AB
***S
new, original packaged
***ark
N-CHANNEL 600V
N-Channel FDmesh Power MOSFETs
STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
भाग # Mfg। विवरण स्टक मूल्य
STP28NM60ND
DISTI # V79:2366_17783229		STMicroelectronicsTrans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		246
  • 1000:$3.1040
  • 500:$3.6080
  • 250:$4.0830
  • 100:$4.3000
  • 10:$4.9120
  • 1:$6.4042
STP28NM60ND
DISTI # V36:1790_06564666		STMicroelectronicsTrans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 1000000:$2.6850
  • 500000:$2.6880
  • 100000:$2.9650
  • 10000:$3.4660
  • 1000:$3.5500
STP28NM60ND
DISTI # 497-14196-5-ND		STMicroelectronicsMOSFET N-CH 600V 23A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		30In Stock
  • 2500:$3.0932
  • 500:$3.8607
  • 100:$4.5352
  • 50:$5.2330
  • 10:$5.5350
  • 1:$6.1600
STP28NM60ND
DISTI # 26113855		STMicroelectronicsTrans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		246
  • 3:$6.4042
STP28NM60ND
DISTI # STP28NM60ND		STMicroelectronicsTrans MOSFET N-CH 600V 23A 3-Pin TO-220 Tube (Alt: STP28NM60ND)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 500:€1.1900
  • 1000:€1.1900
  • 50:€1.2900
  • 100:€1.2900
  • 25:€1.3900
  • 10:€1.4900
  • 1:€1.6900
STP28NM60ND
DISTI # STP28NM60ND		STMicroelectronicsTrans MOSFET N-CH 600V 23A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP28NM60ND)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$2.7900
  • 10000:$2.7900
  • 4000:$2.9900
  • 2000:$3.0900
  • 1000:$3.2900
STP28NM60ND
DISTI # 19X6241		STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$2.8800
  • 250:$2.9700
  • 100:$3.5500
  • 50:$4.1000
  • 25:$4.3700
  • 10:$4.9900
  • 1:$5.7600
STP28NM60ND
DISTI # 511-STP28NM60ND		STMicroelectronicsMOSFET N-channel 600 V 0 120 Ohm typ 24 A
RoHS: Compliant		1000
  • 1:$5.8700
  • 10:$4.9900
  • 100:$4.3200
  • 250:$4.1000
  • 500:$3.6800
  • 1000:$3.1100
छवि भाग # विवरण
STP28NM60ND

Mfr.#: STP28NM60ND

OMO.#: OMO-STP28NM60ND

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STP28X7MYL

Mfr.#: STP28X7MYL

OMO.#: OMO-STP28X7MYL

 Wire Ducting & Raceways Cat 6A 28AWG Shielded Patch Cord, CM/LSZ
STP28X3MBL

Mfr.#: STP28X3MBL

OMO.#: OMO-STP28X3MBL

 Wire Ducting & Raceways Cat 6A 28AWG Shielded Patch Cord, CM/LSZ
STP28X40MIG

Mfr.#: STP28X40MIG

OMO.#: OMO-STP28X40MIG

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STP28X19MRD

Mfr.#: STP28X19MRD

OMO.#: OMO-STP28X19MRD

 Wire Ducting & Raceways Cat 6A 28AWG Shielded Patch Cord, CM/LSZ
STP28X30MOR

Mfr.#: STP28X30MOR

OMO.#: OMO-STP28X30MOR

 Wire Ducting & Raceways Cat 6A 28AWG Shielded Patch Cord, CM/LSZ
STP28X15MBU

Mfr.#: STP28X15MBU

OMO.#: OMO-STP28X15MBU

 Wire Ducting & Raceways Cat 6A 28AWG Shielded Patch Cord, CM/LSZ
STP28X8MBU

Mfr.#: STP28X8MBU

OMO.#: OMO-STP28X8MBU

 Wire Ducting & Raceways Cat 6A 28AWG Shielded Patch Cord, CM/LSZ
STP28X19MVL

Mfr.#: STP28X19MVL

OMO.#: OMO-STP28X19MVL

 Wire Ducting & Raceways Cat 6A 28AWG Shielded Patch Cord, CM/LSZ
STP2803B LF

Mfr.#: STP2803B LF

OMO.#: OMO-STP2803B-LF-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
STP28NM60ND को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५.८७
US$ ५.८७
10
US$ ४.९९
US$ ४९.९०
100
US$ ४.३२
US$ ४३२.००
250
US$ ४.१०
US$ १ ०२५.००
500
US$ ३.६८
US$ १ ८४०.००
1000
US$ ३.११
US$ ३ ११०.००
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