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SIJ470DP-T1-GE3

SIJ470DP-T1-GE3
Mfr. #:
SIJ470DP-T1-GE3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIJ470DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIJ470DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay / Siliconix
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
पावर MOSFET
प्याकेजिङ
रील
एकाइ - वजन
0.017870 oz
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
ThunderFET TrenchFET
प्याकेज-केस
SO-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
56.8 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
7 ns
उदय-समय
8 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
58.8 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
3.5 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
9.1 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
22 ns
सामान्य-टर्न-अन-डिले-समय
12 ns
Qg-गेट-चार्ज
36.9 nC
च्यानल-मोड
वृद्धि
Tags
SIJ470, SIJ47, SIJ4, SIJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 9.1 mOhm 56.8 W SMT ThunderFET Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 100V 17.4A 5-Pin(4+Tab) PowerPAK SO
***i-Key
MOSFET N-CH 100V 58.8A PPAK SO-8
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
भाग # Mfg। विवरण स्टक मूल्य
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		964In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		964In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.7238
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.4A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIJ470DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.6839
  • 12000:$0.6629
  • 18000:$0.6359
  • 30000:$0.6189
  • 60000:$0.6019
SIJ470DP-T1-GE3
DISTI # 78-SIJ470DP-T1-GE3		Vishay IntertechnologiesMOSFET 100V 9.1mOhm@10V 58.8A N-CH
RoHS: Compliant		4267
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.7850
  • 3000:$0.7840
SIJ470DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor
RoHS: Compliant		Europe - 6000
    SIJ470DP-T1-GE3Vishay IntertechnologiesMOSFET 100V 9.1mOhm@10V 58.8A N-CH
    RoHS: Compliant    		Americas -
    • 3000:$0.6580
    • 12000:$0.5920
    छवि भाग # विवरण
    SIJ470DP-T1-GE3

    Mfr.#: SIJ470DP-T1-GE3

    OMO.#: OMO-SIJ470DP-T1-GE3

    		 MOSFET 100V 9.1mOhm@10V 58.8A N-CH
    SIJ470DP-T1-GE3

    Mfr.#: SIJ470DP-T1-GE3

    OMO.#: OMO-SIJ470DP-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH
    SIJ470DP

    Mfr.#: SIJ470DP

    OMO.#: OMO-SIJ470DP-1190

    		 नयाँ र मौलिक
    SIJ470DPT1GE3

    Mfr.#: SIJ470DPT1GE3

    OMO.#: OMO-SIJ470DPT1GE3-1190

    		 Power Field-Effect Transisto
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5500
    मात्रा प्रविष्ट गर्नुहोस्:
    SIJ470DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.८९
    US$ ०.८९
    10
    US$ ०.८४
    US$ ८.४४
    100
    US$ ०.८०
    US$ ७९.९२
    500
    US$ ०.७५
    US$ ३७७.४०
    1000
    US$ ०.७१
    US$ ७१०.४०
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