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SIJ470DP-T1-GE3

SIJ470DP-T1-GE3
Mfr. #:
SIJ470DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 100V 9.1mOhm@10V 58.8A N-CH
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIJ470DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIJ470DP-T1-GE3 DatasheetSIJ470DP-T1-GE3 Datasheet (P4-P6)SIJ470DP-T1-GE3 Datasheet (P7-P9)SIJ470DP-T1-GE3 Datasheet (P10)
ECAD Model:
थप जानकारी:
SIJ470DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
58.8 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
7.6 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.3 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
56 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
56.8 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
ThunderFET, PowerPAK
प्याकेजिङ:
रील
शृङ्खला:
SIJ
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
60 S
पतन समय:
7 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
22 ns
सामान्य टर्न-अन ढिलाइ समय:
12 ns
एकाइ वजन:
0.017870 oz
Tags
SIJ470, SIJ47, SIJ4, SIJ
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 9.1 mOhm 56.8 W SMT ThunderFET Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 100V 17.4A 5-Pin(4+Tab) PowerPAK SO
***i-Key
MOSFET N-CH 100V 58.8A PPAK SO-8
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
भाग # Mfg। विवरण स्टक मूल्य
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		964In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		964In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.7238
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.4A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIJ470DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.6839
  • 12000:$0.6629
  • 18000:$0.6359
  • 30000:$0.6189
  • 60000:$0.6019
SIJ470DP-T1-GE3
DISTI # 78-SIJ470DP-T1-GE3		Vishay IntertechnologiesMOSFET 100V 9.1mOhm@10V 58.8A N-CH
RoHS: Compliant		4267
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.7850
  • 3000:$0.7840
SIJ470DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor
RoHS: Compliant		Europe - 6000
    SIJ470DP-T1-GE3Vishay IntertechnologiesMOSFET 100V 9.1mOhm@10V 58.8A N-CH
    RoHS: Compliant    		Americas -
    • 3000:$0.6580
    • 12000:$0.5920
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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1986
    मात्रा प्रविष्ट गर्नुहोस्:
    SIJ470DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.६४
    US$ १.६४
    10
    US$ १.३५
    US$ १३.५०
    100
    US$ १.०३
    US$ १०३.००
    500
    US$ ०.८९
    US$ ४४७.००
    1000
    US$ ०.७०
    US$ ७०५.००
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