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SI7900AEDN-T1-GE3

SI7900AEDN-T1-GE3
Mfr. #:
SI7900AEDN-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7900AEDN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI7900AEDN-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-1212-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
20 V
आईडी - निरन्तर ड्रेन वर्तमान:
8.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
26 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
400 mV
Vgs - गेट-स्रोत भोल्टेज:
12 V
Qg - गेट चार्ज:
16 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
3.1 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SI7
ट्रान्जिस्टर प्रकार:
2 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
25 S
पतन समय:
4.2 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
1.3 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
8.6 ns
सामान्य टर्न-अन ढिलाइ समय:
0.85 ns
भाग # उपनाम:
SI7900AEDN-GE3
Tags
SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI7900AEDN-T1-GE3 Dual N-channel MOSFET Transistor; 6 A; 20V; 8-Pin PowerPAK 1212
***Components
In a Pack of 10, Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7900AEDN-T1-GE3
***ical
Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET 2N-CH 20V 6A PPAK 1212-8
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6In Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6In Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.5236
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4939
  • 6000:$0.4799
  • 12000:$0.4599
  • 18000:$0.4469
  • 30000:$0.4349
SI7900AEDN-T1-GE3
DISTI # 70617004		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant		0
  • 300:$0.8200
  • 600:$0.7500
  • 1500:$0.6900
  • 3000:$0.6100
SI7900AEDN-T1-GE3
DISTI # 781-SI7900AEDN-GE3		Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs PowerPAK 1212-8
RoHS: Compliant		2990
  • 1:$1.1900
  • 10:$0.9800
  • 100:$0.7520
  • 500:$0.6470
  • 1000:$0.5100
  • 3000:$0.4760
SI7900AEDN-T1-GE3Vishay Intertechnologies 960
    छवि भाग # विवरण
    SI7900AEDN-T1-E3

    Mfr.#: SI7900AEDN-T1-E3

    OMO.#: OMO-SI7900AEDN-T1-E3

    		 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
    SI7900AEDN-T1-GE3

    Mfr.#: SI7900AEDN-T1-GE3

    OMO.#: OMO-SI7900AEDN-T1-GE3

    		 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
    SI7900AEDN-T1-E3

    Mfr.#: SI7900AEDN-T1-E3

    OMO.#: OMO-SI7900AEDN-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
    SI7900AEDN-T1-GE3

    Mfr.#: SI7900AEDN-T1-GE3

    OMO.#: OMO-SI7900AEDN-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
    SI7900AEDN

    Mfr.#: SI7900AEDN

    OMO.#: OMO-SI7900AEDN-1190

    		 नयाँ र मौलिक
    SI7900AEDN-T

    Mfr.#: SI7900AEDN-T

    OMO.#: OMO-SI7900AEDN-T-1190

    		 नयाँ र मौलिक
    SI7900AEDN-T1

    Mfr.#: SI7900AEDN-T1

    OMO.#: OMO-SI7900AEDN-T1-1190

    		 नयाँ र मौलिक
    SI7900AEDN-T1-E3 GE3

    Mfr.#: SI7900AEDN-T1-E3 GE3

    OMO.#: OMO-SI7900AEDN-T1-E3-GE3-1190

    		 नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1993
    मात्रा प्रविष्ट गर्नुहोस्:
    SI7900AEDN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.१८
    US$ १.१८
    10
    US$ ०.९८
    US$ ९.७९
    100
    US$ ०.७५
    US$ ७५.१०
    500
    US$ ०.६५
    US$ ३२३.००
    1000
    US$ ०.५१
    US$ ५०९.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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