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SI7900AEDN-T1-GE3

SI7900AEDN-T1-GE3
Mfr. #:
SI7900AEDN-T1-GE3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7900AEDN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI7900AEDN-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI7900AEDN-GE3
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
TrenchFET/PowerPAK
प्याकेज-केस
PowerPAKR 1212-8 Dual
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
PowerPAKR 1212-8 Dual
कन्फिगरेसन
दोहोरो
FET-प्रकार
2 N-Channel (Dual) Common Drain
पावर-अधिकतम
1.5W
ट्रान्जिस्टर-प्रकार
2 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
20V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
6A
Rds-on-max-Id-Vgs
26 mOhm @ 8.5A, 4.5V
Vgs-th-max-Id
900mV @ 250μA
गेट-चार्ज-Qg-Vgs
16nC @ 4.5V
Pd-शक्ति-डिसिपेशन
1.5 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
1300 ns
उदय-समय
1300 ns
Vgs-गेट-स्रोत-भोल्टेज
12 V
आईडी-निरन्तर-नाली-वर्तमान
6 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
20 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
26 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
8600 ns
सामान्य-टर्न-अन-डिले-समय
850 ns
च्यानल-मोड
वृद्धि
Tags
SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI7900AEDN-T1-GE3 Dual N-channel MOSFET Transistor; 6 A; 20V; 8-Pin PowerPAK 1212
***Components
In a Pack of 10, Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7900AEDN-T1-GE3
***ical
Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET 2N-CH 20V 6A PPAK 1212-8
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6In Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6In Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.5236
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4939
  • 6000:$0.4799
  • 12000:$0.4599
  • 18000:$0.4469
  • 30000:$0.4349
SI7900AEDN-T1-GE3
DISTI # 70617004		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant		0
  • 300:$0.8200
  • 600:$0.7500
  • 1500:$0.6900
  • 3000:$0.6100
SI7900AEDN-T1-GE3
DISTI # 781-SI7900AEDN-GE3		Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs PowerPAK 1212-8
RoHS: Compliant		2990
  • 1:$1.1900
  • 10:$0.9800
  • 100:$0.7520
  • 500:$0.6470
  • 1000:$0.5100
  • 3000:$0.4760
SI7900AEDN-T1-GE3Vishay Intertechnologies 960
    छवि भाग # विवरण
    SI7900AEDN-T1-E3

    Mfr.#: SI7900AEDN-T1-E3

    OMO.#: OMO-SI7900AEDN-T1-E3

    		 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
    SI7900AEDN-T1-GE3

    Mfr.#: SI7900AEDN-T1-GE3

    OMO.#: OMO-SI7900AEDN-T1-GE3

    		 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
    SI7900AEDN-T1-E3

    Mfr.#: SI7900AEDN-T1-E3

    OMO.#: OMO-SI7900AEDN-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
    SI7900AEDN-T1-GE3

    Mfr.#: SI7900AEDN-T1-GE3

    OMO.#: OMO-SI7900AEDN-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
    SI7900AEDN

    Mfr.#: SI7900AEDN

    OMO.#: OMO-SI7900AEDN-1190

    		 नयाँ र मौलिक
    SI7900AEDN-T

    Mfr.#: SI7900AEDN-T

    OMO.#: OMO-SI7900AEDN-T-1190

    		 नयाँ र मौलिक
    SI7900AEDN-T1

    Mfr.#: SI7900AEDN-T1

    OMO.#: OMO-SI7900AEDN-T1-1190

    		 नयाँ र मौलिक
    SI7900AEDN-T1-E3 GE3

    Mfr.#: SI7900AEDN-T1-E3 GE3

    OMO.#: OMO-SI7900AEDN-T1-E3-GE3-1190

    		 नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    3000
    मात्रा प्रविष्ट गर्नुहोस्:
    SI7900AEDN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.६५
    US$ ०.६५
    10
    US$ ०.६२
    US$ ६.२०
    100
    US$ ०.५९
    US$ ५८.७१
    500
    US$ ०.५५
    US$ २७७.२५
    1000
    US$ ०.५२
    US$ ५२१.९०
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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