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SI3588DV-T1-E3

SI3588DV-T1-E3
Mfr. #:
SI3588DV-T1-E3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 20V 3.0/2.2A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI3588DV-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3588DV-T1-E3 DatasheetSI3588DV-T1-E3 Datasheet (P4-P6)SI3588DV-T1-E3 Datasheet (P7-P8)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR
अंश-उपनामहरू
SI3588DV-E3
एकाइ - वजन
0.000705 oz
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
TrenchFET
प्याकेज-केस
SOT-23-6 Thin, TSOT-23-6
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
6-TSOP
कन्फिगरेसन
1 N-Channel 1 P-Channel
FET-प्रकार
N र P- च्यानल
पावर-अधिकतम
830mW, 83mW
ट्रान्जिस्टर-प्रकार
1 N-Channel 1 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
20V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
2.5A, 570mA
Rds-on-max-Id-Vgs
80 mOhm @ 3A, 4.5V
Vgs-th-max-Id
450mV @ 250μA (Min)
गेट-चार्ज-Qg-Vgs
7.5nC @ 4.5V
Pd-शक्ति-डिसिपेशन
830 mW
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
30 ns 29 ns
उदय-समय
30 ns 29 ns
Vgs-गेट-स्रोत-भोल्टेज
8 V
आईडी-निरन्तर-नाली-वर्तमान
2.5 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
20 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
80 mOhms 145 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
28 ns 24 ns
सामान्य-टर्न-अन-डिले-समय
12 ns 12 ns
च्यानल-मोड
वृद्धि
Tags
SI3588D, SI3588, SI358, SI35, SI3
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N/P-CH 20V 2.5A/0.57A 6-Pin TSOP T/R
***i-Key
MOSFET N/P-CH 20V 2.5A 6TSOP
***ser
Dual MOSFETs 20V 3.0/2.2A
***nell
MOSFET, P, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:Dual N / P Channel; Voltage, Vds Typ:20V; Current, Id Cont:3A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:4.5V; Case Style:TSOP-6
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TSOP-6 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, TSOP-6; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:450mV; Power Dissipation Pd:830mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):80mohm; Package / Case:TSOP-6; Power Dissipation Pd:830mW; Voltage Vds Typ:20V; Voltage Vgs Max:450mV; Voltage Vgs Rds on Measurement:4.5V
भाग # Mfg। विवरण स्टक मूल्य
SI3588DV-T1-E3
DISTI # SI3588DV-T1-E3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 2.5A 6TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI3588DV-T1-E3
    DISTI # SI3588DV-T1-E3CT-ND    		Vishay SiliconixMOSFET N/P-CH 20V 2.5A 6TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI3588DV-T1-E3
      DISTI # SI3588DV-T1-E3DKR-ND      		Vishay SiliconixMOSFET N/P-CH 20V 2.5A 6TSOP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI3588DV-T1-E3
        DISTI # 781-SI3588DV-E3        		Vishay IntertechnologiesMOSFET 20V 3.0/2.2A
        RoHS: Compliant        		0
          SI3588DV-T1-E3
          DISTI # 1612643RL          		Vishay IntertechnologiesMOSFET, P, TSOP-6
          RoHS: Compliant          		0
          • 1:$2.1600
          • 10:$1.7400
          • 100:$1.3900
          • 250:$1.2000
          • 500:$1.0400
          • 1000:$0.9660
          • 3000:$0.9320
          SI3588DV-T1-E3
          DISTI # 1612643          		Vishay IntertechnologiesMOSFET, P, TSOP-6
          RoHS: Compliant          		0
          • 1:$2.1600
          • 10:$1.7400
          • 100:$1.3900
          • 250:$1.2000
          • 500:$1.0400
          • 1000:$0.9660
          • 3000:$0.9320
          छवि भाग # विवरण
          SI3588DV-T1-GE3

          Mfr.#: SI3588DV-T1-GE3

          OMO.#: OMO-SI3588DV-T1-GE3

          		 MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3
          SI3588DV-T1-E3

          Mfr.#: SI3588DV-T1-E3

          OMO.#: OMO-SI3588DV-T1-E3-VISHAY

          		 IGBT Transistors MOSFET 20V 3.0/2.2A
          SI3588DV-T1-GE3

          Mfr.#: SI3588DV-T1-GE3

          OMO.#: OMO-SI3588DV-T1-GE3-VISHAY

          		 MOSFET N/P-CH 20V 2.5A 6-TSOP
          SI3588DV-T1E3

          Mfr.#: SI3588DV-T1E3

          OMO.#: OMO-SI3588DV-T1E3-1190

          		 नयाँ र मौलिक
          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          4000
          मात्रा प्रविष्ट गर्नुहोस्:
          SI3588DV-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
          सन्दर्भ मूल्य (USD)
          मात्रा
          एकाइ मूल्य
          विस्तार मूल्य
          1
          US$ ०.००
          US$ ०.००
          10
          US$ ०.००
          US$ ०.००
          100
          US$ ०.००
          US$ ०.००
          500
          US$ ०.००
          US$ ०.००
          1000
          US$ ०.००
          US$ ०.००
          बाट सुरु गर्नुहोस्
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