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| PartNumber | SI3588DV-T1-GE3 | SI3588DV-T1-E3 | SI3588DV-T1E3 |
| Description | MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3 | IGBT Transistors MOSFET 20V 3.0/2.2A | |
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Digi-ReelR | - |
| Height | 1.1 mm | - | - |
| Length | 3.05 mm | - | - |
| Series | SI3 | TrenchFETR | - |
| Width | 1.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI3588DV-GE3 | - | - |
| Unit Weight | 0.000705 oz | 0.000705 oz | - |
| Part Aliases | - | SI3588DV-E3 | - |
| Package Case | - | SOT-23-6 Thin, TSOT-23-6 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | 6-TSOP | - |
| Configuration | - | 1 N-Channel 1 P-Channel | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 830mW, 83mW | - |
| Transistor Type | - | 1 N-Channel 1 P-Channel | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 2.5A, 570mA | - |
| Rds On Max Id Vgs | - | 80 mOhm @ 3A, 4.5V | - |
| Vgs th Max Id | - | 450mV @ 250μA (Min) | - |
| Gate Charge Qg Vgs | - | 7.5nC @ 4.5V | - |
| Pd Power Dissipation | - | 830 mW | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 30 ns 29 ns | - |
| Rise Time | - | 30 ns 29 ns | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 2.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 80 mOhms 145 mOhms | - |
| Transistor Polarity | - | N-Channel P-Channel | - |
| Typical Turn Off Delay Time | - | 28 ns 24 ns | - |
| Typical Turn On Delay Time | - | 12 ns 12 ns | - |
| Channel Mode | - | Enhancement | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3588DV-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3 | |
Vishay |
SI3588DV-T1-E3 | IGBT Transistors MOSFET 20V 3.0/2.2A | |
| SI3588DV-T1-GE3 | MOSFET N/P-CH 20V 2.5A 6-TSOP | ||
| SI3588DV-T1E3 | नयाँ र मौलिक | ||
| SI3588N | नयाँ र मौलिक |