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IXTP05N100P

IXTP05N100P
Mfr. #:
IXTP05N100P
निर्माता:
Littelfuse
विवरण:
MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXTP05N100P डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP05N100P DatasheetIXTP05N100P Datasheet (P4-P6)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1 kV
आईडी - निरन्तर ड्रेन वर्तमान:
500 mA
Rds अन - ड्रेन-स्रोत प्रतिरोध:
30 Ohms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
8.1 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
50 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उत्पादन:
MOSFET
शृङ्खला:
IXTP05N100
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
IXYS
पतन समय:
15 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
15 ns
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
20 ns
सामान्य टर्न-अन ढिलाइ समय:
6 ns
एकाइ वजन:
0.012346 oz
Tags
IXTP05, IXTP0, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***i-Key
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***roFlash
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***icroelectronics
N-CHANNEL 1000V - 1.60Ohm - 6.5A - TO-220 - TO-220FP
***ical
Trans MOSFET N-CH 1KV 6.5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CH, 1000V, 6.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V;
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 6.5A I(D), 1000V, 1.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-CHANNEL 1000V - 3 Ohm - 3.5A - TO-220FP ZENER-PROTECTED SUPERMESH MOSFET
***roFlash
Mosfet Transistor, N Channel, 1.75 A, 1 Kv, 2.7 Ohm, 30 V, 3.75 V Rohs Compliant: Yes
***ure Electronics
N-Channel 1000 V 3.7 Ohm SuperMESH3 Power MosFet TO-220FP
***nell
MOSFET, N CH, 1KV, 3.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.75A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 2.7ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3.75V; P
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 1000V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ical
Trans MOSFET N-CH 1KV 2.5A 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
N-channel 1000V - 5.4Ohm - 2.5A - TO-220 - TO-220FP
***ure Electronics
N-channel 1000 V 6 Ohm 25 W Through Hole SuperMESH™ Power Mosfet - TO-220FP
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 1KV, 2.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F
***hard Electronics
In a Pack of 5, N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F ON Semiconductor FQPF3N80C
***Yang
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F
***ure Electronics
Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F
***enic
900V 4A 47W 4.2´Î@10V2A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220F
***ow.cn
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 800V, 6.6A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
***r Electronics
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
भाग # Mfg। विवरण स्टक मूल्य
IXTP05N100P
DISTI # IXTP05N100P-ND		IXYS CorporationMOSFET N-CH 1000V 500MA TO-263
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$1.8700
IXTP05N100P
DISTI # 747-IXTP05N100P		IXYS CorporationMOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
RoHS: Compliant		0
  • 1:$2.4200
  • 10:$2.1900
  • 25:$1.9100
  • 50:$1.7900
  • 100:$1.7600
  • 250:$1.4300
  • 500:$1.3700
  • 1000:$1.1300
  • 2500:$0.9520
छवि भाग # विवरण
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Mfr.#: IXTP01N100D

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Mfr.#: IXTP02N120P

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Mfr.#: IXTP05N100

OMO.#: OMO-IXTP05N100

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IXTP08N120P

Mfr.#: IXTP08N120P

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Mfr.#: IXTP08N120P

OMO.#: OMO-IXTP08N120P-IXYS-CORPORATION

 MOSFET N-CH 1200V 800MA TO-220
IXTP05N100M

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OMO.#: OMO-IXTP05N100M-IXYS-CORPORATION

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OMO.#: OMO-IXTP05N100-IXYS-CORPORATION

 IGBT Transistors MOSFET 0.75 Amps 1000V 15 Rds
IXTP02N120P

Mfr.#: IXTP02N120P

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 IGBT Transistors MOSFET 500V to 1200V Polar Power MOSFET
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उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
IXTP05N100P को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.४२
US$ २.४२
10
US$ २.१९
US$ २१.९०
25
US$ १.९१
US$ ४७.७५
50
US$ १.७९
US$ ८९.५०
100
US$ १.७६
US$ १७६.००
250
US$ १.४३
US$ ३५७.५०
500
US$ १.३७
US$ ६८५.००
1000
US$ १.१३
US$ १ १३०.००
2500
US$ ०.९५
US$ २ ३८०.००
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