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IXTH130N15X4

IXTH130N15X4
Mfr. #:
IXTH130N15X4
निर्माता:
Littelfuse
विवरण:
MOSFET DISCMSFT NCH HIPERFET-Q CLASS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXTH130N15X4 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IXTH130N15X4 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
150 V
आईडी - निरन्तर ड्रेन वर्तमान:
130 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
8.5 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
87 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
400 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
HiPerFET
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
IXYS
पतन समय:
10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
27 ns
कारखाना प्याक मात्रा:
30
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
100 ns
सामान्य टर्न-अन ढिलाइ समय:
20 ns
Tags
IXTH130N1, IXTH130, IXTH13, IXTH1, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X4-Class 135V-150V Power MOSFETs
IXYS X4-Class 135V-150V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. These MOSFETs are also avalanche rated and exhibit a superior dv/dt performance. Due to the positive temperature coefficient of their on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
छवि भाग # विवरण
IXTH130N15X4

Mfr.#: IXTH130N15X4

OMO.#: OMO-IXTH130N15X4

 MOSFET DISCMSFT NCH HIPERFET-Q CLASS
IXTH130N20T

Mfr.#: IXTH130N20T

OMO.#: OMO-IXTH130N20T

 MOSFET 130Amps 200V
IXTH130N10T

Mfr.#: IXTH130N10T

OMO.#: OMO-IXTH130N10T

 MOSFET 130 Amps 100V 8.5 Rds
IXTH130N15T

Mfr.#: IXTH130N15T

OMO.#: OMO-IXTH130N15T

 MOSFET 130 Amps 150V 12 Rds
IXTH13N80

Mfr.#: IXTH13N80

OMO.#: OMO-IXTH13N80

 MOSFET 13 Amps 800V
IXTH130N15T

Mfr.#: IXTH130N15T

OMO.#: OMO-IXTH130N15T-IXYS-CORPORATION

 MOSFET N-CH 150V 130A TO-247
IXTH13N110

Mfr.#: IXTH13N110

OMO.#: OMO-IXTH13N110-IXYS-CORPORATION

 MOSFET 13 Amps 1100V 0.92 Rds
IXTH13N80

Mfr.#: IXTH13N80

OMO.#: OMO-IXTH13N80-IXYS-CORPORATION

 MOSFET 13 Amps 800V
IXTH130N10T

Mfr.#: IXTH130N10T

OMO.#: OMO-IXTH130N10T-IXYS-CORPORATION

 MOSFET N-CH 100V 130A TO-247
IXTH130N20T

Mfr.#: IXTH130N20T

OMO.#: OMO-IXTH130N20T-IXYS-CORPORATION

 MOSFET 130Amps 200V
उपलब्धता
स्टक:
30
अर्डर मा:
2013
मात्रा प्रविष्ट गर्नुहोस्:
IXTH130N15X4 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ११.४१
US$ ११.४१
10
US$ १०.२७
US$ १०२.७०
25
US$ ८.५४
US$ २१३.५०
50
US$ ७.९४
US$ ३९७.००
100
US$ ७.७६
US$ ७७६.००
250
US$ ७.०९
US$ १ ७७२.५०
500
US$ ६.४६
US$ ३ २३०.००
1000
US$ ६.१६
US$ ६ १६०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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