IPB042N10N3GE818XT

Mfr. #:: IPB042N10N3GE818XT
निर्माता:: Infineon Technologies
विवरण:: MOSFET N-Ch 100V 100A D2PAK-2
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB042N10N3GE818XT डाटा पाना
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थप जानकारी:: IPB042N10N3GE818XT थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 100 V

आईडी - निरन्तर ड्रेन वर्तमान:: 100 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 3.6 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 117 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 214 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: OptiMOS

प्याकेजिङ:: रील

उचाइ:: 4.4 mm

लम्बाइ:: 10 mm

शृङ्खला:: OptiMOS 3

ट्रान्जिस्टर प्रकार:: 1 N-Channel

चौडाइ:: 9.25 mm

ब्रान्ड:: Infineon टेक्नोलोजीहरू

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 73 S

पतन समय:: 14 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 59 ns

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 48 ns

सामान्य टर्न-अन ढिलाइ समय:: 27 ns

भाग # उपनाम:: IPB042N10N3GE8187ATMA1 SP000939332

एकाइ वजन:: 0.139332 oz

Tags: IPB042N10N3GE, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB042N10N3GE818XT विवरण

*** Electronic Components: MOSFET N-Ch 100V 100A D2PAK-2

***eco: Transistor MOSFET N Channel 100 Volt 140 Amp 3-Pin 2+ Tab D2Pak

***ure Electronics: Single N-Channel 100 V 7 mOhm 170 nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: MOSFET N-CH 100V 130A D2PAK / Trans MOSFET N-CH 100V 130A 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: 100V Single N-Channel IR MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:100V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:140A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): IRFS4310ZPBF N-channel MOSFET Transistor; 127 A; 100 V; 3-Pin D2PAK

***ure Electronics: Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

***p One Stop: Trans MOSFET N-CH Si 100V 127A 3-Pin(2+Tab) D2PAK Tube

***ineon SCT: 100V Single N-Channel IR MOSFET in a D2-Pak package, D2PAK-3, RoHS

***roFlash: Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:250W; No. of Pins:3Pins RoHS Compliant: Yes

***icroelectronics: N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in D2PAK package

***ure Electronics: N-Channel 100 V 0.0105 Ohm Surface Mount STripFET II MosFet - D2PAK

*** Source Electronics: Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 110A D2PAK

***r Electronics: Power Field-Effect Transistor, 120A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N, SMD, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:312W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:110A; On State resistance @ Vgs = 10V:10.5mohm; Package / Case:D2-PAK; Power Dissipation Pd:312W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK

***et: Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: N-Channel 100 V 0.023 O Surface Mount STripFET II Power MosFet - D2PAK

***r Electronics: Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 100V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power

***Yang: Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***hard Electronics: FAIRCHILD SEMICONDUCTOR FDB088N08 MOSFET Transistor, N Channel, 120 A, 75 V, 0.0073 ohm, 10 V, 2 V

***ure Electronics: Single N-Channel 75 V 160 W 118 nC PowerTrench Surface Mount Mosfet - TO-263-3

***emi: N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ

***r Electronics: Power Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N CH, 75V, 85A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

IPB042N10N3GE818XT थप जानकारी

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB042N10N3GE818XT DISTI # 726-IPB042N10N3GEMA1	Infineon Technologies AG	MOSFET N-Ch 100V 100A D2PAK-2 RoHS: Compliant	0	1:$2.7900 10:$2.3700 100:$1.8900 500:$1.6600 1000:$1.3700 2000:$1.2800 5000:$1.2300

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IPB042N10N3 G OMO.#: OMO-IPB042N10N3-G	MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
	Mfr.#: IPB042N10N3GE818XT OMO.#: OMO-IPB042N10N3GE818XT	MOSFET N-Ch 100V 100A D2PAK-2
	Mfr.#: IPB042N10N3GATMA1-CUT TAPE OMO.#: OMO-IPB042N10N3GATMA1-CUT-TAPE-1190	नयाँ र मौलिक
	Mfr.#: IPB042N10N3 OMO.#: OMO-IPB042N10N3-1190	नयाँ र मौलिक
	Mfr.#: IPB042N10N3GATMA1 OMO.#: OMO-IPB042N10N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 100A TO263-3
	Mfr.#: IPB042N10N3GATMA1 , 2SD1 OMO.#: OMO-IPB042N10N3GATMA1-2SD1-1190	नयाँ र मौलिक
	Mfr.#: IPB042N10N3GATMA1INFINEO OMO.#: OMO-IPB042N10N3GATMA1INFINEO-1190	नयाँ र मौलिक
	Mfr.#: IPB042N10N3GE8187ATMA1 OMO.#: OMO-IPB042N10N3GE8187ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 100A TO263-3
	Mfr.#: IPB042N10N3GS OMO.#: OMO-IPB042N10N3GS-1190	नयाँ र मौलिक
	Mfr.#: IPB042N10N3GE818XT OMO.#: OMO-IPB042N10N3GE818XT-317	RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2

उपलब्धता

स्टक:: Available
अर्डर मा:: 3500
मात्रा प्रविष्ट गर्नुहोस्:

IPB042N10N3GE818XT को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.७९~~; ~~US$ २.७९~~

10: ~~US$ २.३७~~; ~~US$ २३.७०~~

100: ~~US$ १.८९~~; ~~US$ १८९.००~~

500: ~~US$ १.६६~~; ~~US$ ८३०.००~~

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IPB042N10N3GE818XT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes