IPB042N10N3GE818XT

IPB042N10N3GE818XT
Mfr. #:
IPB042N10N3GE818XT
निर्माता:
Infineon Technologies
विवरण:
RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB042N10N3GE818XT डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB042N10N3GE818XT थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Infineon टेक्नोलोजीहरू
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
IPB042N10
प्याकेजिङ
रील
अंश-उपनामहरू
IPB042N10N3GE8187ATMA1 SP000939332
एकाइ - वजन
0.139332 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
TO-252-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
214 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
14 ns
उदय-समय
59 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
100 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
4.2 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
48 ns
Qg-गेट-चार्ज
88 nC
Tags
IPB042N10N3GE, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 100V 100A TO263-3
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB042N10N3GE818XT
DISTI # 726-IPB042N10N3GEMA1
Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2
RoHS: Compliant
0
  • 1:$2.7900
  • 10:$2.3700
  • 100:$1.8900
  • 500:$1.6600
  • 1000:$1.3700
  • 2000:$1.2800
  • 5000:$1.2300
छवि भाग # विवरण
IPB042N10N3GATMA1

Mfr.#: IPB042N10N3GATMA1

OMO.#: OMO-IPB042N10N3GATMA1

MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G

MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N10N3 G E8187

Mfr.#: IPB042N10N3 G E8187

OMO.#: OMO-IPB042N10N3-G-E8187

MOSFET N-Ch 100V 100A D2PAK-2
IPB042N10N3GATMA1-CUT TAPE

Mfr.#: IPB042N10N3GATMA1-CUT TAPE

OMO.#: OMO-IPB042N10N3GATMA1-CUT-TAPE-1190

नयाँ र मौलिक
IPB042N10N

Mfr.#: IPB042N10N

OMO.#: OMO-IPB042N10N-1190

नयाँ र मौलिक
IPB042N10N3

Mfr.#: IPB042N10N3

OMO.#: OMO-IPB042N10N3-1190

नयाँ र मौलिक
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G-1190

Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
IPB042N10N3G

Mfr.#: IPB042N10N3G

OMO.#: OMO-IPB042N10N3G-1190

100V,100A,N Channel Power MOSFET
IPB042N10N3GATMA1INFINEO

Mfr.#: IPB042N10N3GATMA1INFINEO

OMO.#: OMO-IPB042N10N3GATMA1INFINEO-1190

नयाँ र मौलिक
IPB042N10N3GS

Mfr.#: IPB042N10N3GS

OMO.#: OMO-IPB042N10N3GS-1190

नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
IPB042N10N3GE818XT को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.८४
US$ १.८४
10
US$ १.७५
US$ १७.५३
100
US$ १.६६
US$ १६६.०५
500
US$ १.५७
US$ ७८४.१५
1000
US$ १.४८
US$ १ ४७६.००
बाट सुरु गर्नुहोस्
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