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IXFN82N60Q3

IXFN82N60Q3
Mfr. #:
IXFN82N60Q3
निर्माता:
Littelfuse
विवरण:
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFN82N60Q3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN82N60Q3 DatasheetIXFN82N60Q3 Datasheet (P4-P5)
ECAD Model:
थप जानकारी:
IXFN82N60Q3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
चेसिस माउन्ट
प्याकेज / केस:
SOT-227-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
66 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
75 mOhms
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
275 nC
Pd - शक्ति अपव्यय:
960 W
कन्फिगरेसन:
एकल
व्यापार नाम:
HiPerFET
प्याकेजिङ:
ट्यूब
शृङ्खला:
IXFN82N60
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
IXYS
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
300 ns
कारखाना प्याक मात्रा:
10
उपश्रेणी:
MOSFETs
एकाइ वजन:
1.058219 oz
Tags
IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
भाग # Mfg। विवरण स्टक मूल्य
IXFN82N60Q3
DISTI # V36:1790_15877469		IXYS CorporationTrans MOSFET N-CH 600V 66A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN82N60Q3
    DISTI # IXFN82N60Q3-ND    		IXYS CorporationMOSFET N-CH 600V 66A SOT-227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		24In Stock
    • 100:$34.9950
    • 30:$37.3280
    • 10:$40.3610
    • 1:$43.1600
    IXFN82N60Q3
    DISTI # 747-IXFN82N60Q3    		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
    RoHS: Compliant    		0
    • 1:$43.1600
    • 5:$41.6500
    • 10:$40.3700
    • 25:$37.3300
    • 50:$36.2300
    • 100:$35.0000
    • 200:$32.6700
    छवि भाग # विवरण
    IXFN80N60P3

    Mfr.#: IXFN80N60P3

    OMO.#: OMO-IXFN80N60P3

    		 MOSFET Polar3 HiPerFET Power MOSFET
    IXFN80N50Q3

    Mfr.#: IXFN80N50Q3

    OMO.#: OMO-IXFN80N50Q3

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    IXFN80N50

    Mfr.#: IXFN80N50

    OMO.#: OMO-IXFN80N50

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    IXFN80N50Q2

    Mfr.#: IXFN80N50Q2

    OMO.#: OMO-IXFN80N50Q2

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFN80N50

    Mfr.#: IXFN80N50

    OMO.#: OMO-IXFN80N50-IXYS-CORPORATION

    		 MOSFET N-CH 500V 80A SOT-227B
    IXFN80N50P

    Mfr.#: IXFN80N50P

    OMO.#: OMO-IXFN80N50P-IXYS-CORPORATION

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    Mfr.#: IXFN80N48

    OMO.#: OMO-IXFN80N48-IXYS-CORPORATION

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    IXFN80N50Q2

    Mfr.#: IXFN80N50Q2

    OMO.#: OMO-IXFN80N50Q2-IXYS-CORPORATION

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFN82N60P

    Mfr.#: IXFN82N60P

    OMO.#: OMO-IXFN82N60P-IXYS-CORPORATION

    		 IGBT Transistors MOSFET DIODE Id82 BVdass600
    IXFN80N60P3

    Mfr.#: IXFN80N60P3

    OMO.#: OMO-IXFN80N60P3-IXYS-CORPORATION

    		 MOSFET N-CH 600V 66A SOT-227B
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    3500
    मात्रा प्रविष्ट गर्नुहोस्:
    IXFN82N60Q3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ४३.१६
    US$ ४३.१६
    5
    US$ ४१.६५
    US$ २०८.२५
    10
    US$ ४०.३७
    US$ ४०३.७०
    25
    US$ ३७.३३
    US$ ९३३.२५
    50
    US$ ३६.२३
    US$ १ ८११.५०
    100
    US$ ३५.००
    US$ ३ ५००.००
    200
    US$ ३२.६७
    US$ ६ ५३४.००
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