IXFN240N15T2

IXFN240N15T2
Mfr. #:
IXFN240N15T2
निर्माता:
Littelfuse
विवरण:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFN240N15T2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN240N15T2 DatasheetIXFN240N15T2 Datasheet (P4-P6)
ECAD Model:
थप जानकारी:
IXFN240N15T2 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
चेसिस माउन्ट
प्याकेज / केस:
SOT-227-4
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
150 V
आईडी - निरन्तर ड्रेन वर्तमान:
240 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
5.2 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
460 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
830 W
च्यानल मोड:
वृद्धि
व्यापार नाम:
HiPerFET
प्याकेजिङ:
ट्यूब
शृङ्खला:
IXFN240N15
प्रकार:
GigaMOS Trench T2 HiperFet
ब्रान्ड:
IXYS
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
125 S
पतन समय:
145 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
125 ns
कारखाना प्याक मात्रा:
10
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
77 ns
सामान्य टर्न-अन ढिलाइ समय:
48 ns
एकाइ वजन:
1.058219 oz
Tags
IXFN24, IXFN2, IXFN, IXF
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 150 V 240 A 5.2 mO Surface Mount Power Mosfet - SOT 227
***i-Key
MOSFET N-CH 150V 240A SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
भाग # Mfg। विवरण स्टक मूल्य
IXFN240N15T2
DISTI # IXFN240N15T2-ND
IXYS CorporationMOSFET N-CH 150V 240A SOT227
RoHS: Compliant
Min Qty: 10
Container: Tube
Temporarily Out of Stock
  • 10:$27.7500
IXFN240N15T2
DISTI # 747-IXFN240N15T2
IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
0
  • 200:$21.7500
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OMO.#: OMO-IXFN240N15T2

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MOSFET 24 Amps 900V 0.45W Rds
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MOSFET N-CH 1000V 24A SOT227B
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Mfr.#: IXFN240N25X3

OMO.#: OMO-IXFN240N25X3-IXYS-CORPORATION

MOSFET N-CH 250V 240A SOT227B
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Mfr.#: IXFN24N100

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MOSFET 1KV 24A
IXFN24N90Q

Mfr.#: IXFN24N90Q

OMO.#: OMO-IXFN24N90Q-IXYS-CORPORATION

MOSFET 24 Amps 900V 0.45W Rds
IXFN240N15T2

Mfr.#: IXFN240N15T2

OMO.#: OMO-IXFN240N15T2-IXYS-CORPORATION

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
उपलब्धता
स्टक:
Available
अर्डर मा:
3000
मात्रा प्रविष्ट गर्नुहोस्:
IXFN240N15T2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
10
US$ २७.७५
US$ २७७.५०
30
US$ २५.५०
US$ ७६५.००
50
US$ २४.४२
US$ १ २२१.००
100
US$ २३.७०
US$ २ ३७०.००
200
US$ २१.७५
US$ ४ ३५०.००
500
US$ २०.७०
US$ १० ३५०.००
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
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