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SIHP180N60E-GE3

SIHP180N60E-GE3
Mfr. #:
SIHP180N60E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs TO-220AB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHP180N60E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHP180N60E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220AB-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
19 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
180 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
22 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
156 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
शृङ्खला:
E
ट्रान्जिस्टर प्रकार:
1 N-Channel E-Series Power MOSFET
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
5.3 S
पतन समय:
23 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
49 ns
कारखाना प्याक मात्रा:
1
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
22 ns
सामान्य टर्न-अन ढिलाइ समय:
14 ns
Tags
SIHP18, SIHP1, SIHP, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHP180N60E-GE3
DISTI # V99:2348_22712082		Vishay IntertechnologiesE Series Power MOSFET TO-220AB, 180 m @ 10V1000
  • 2500:$1.5550
  • 1000:$1.6280
  • 500:$1.9350
  • 250:$2.0830
  • 100:$2.1269
  • 10:$2.6680
  • 1:$3.4738
SIHP180N60E-GE3
DISTI # SIHP180N60E-GE3-ND		Vishay SiliconixMOSFET N-CH TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1050In Stock
  • 5000:$1.5711
  • 3000:$1.6325
  • 1000:$1.7184
  • 100:$2.3935
  • 25:$2.7616
  • 10:$2.9210
  • 1:$3.2500
SIHP180N60E-GE3
DISTI # 32654123		Vishay IntertechnologiesE Series Power MOSFET TO-220AB, 180 m @ 10V1000
  • 2500:$1.5550
  • 1000:$1.6280
  • 500:$1.9350
  • 250:$2.0830
  • 100:$2.1269
  • 10:$2.6680
  • 5:$3.4738
SIHP180N60E-GE3
DISTI # SIHP180N60E-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SIHP180N60E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.3900
  • 4000:$1.4900
  • 6000:$1.4900
  • 2000:$1.5900
  • 1000:$1.6900
SIHP180N60E-GE3
DISTI # 07AH4768		Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes48
  • 2500:$1.5700
  • 1000:$1.6500
  • 500:$1.9600
  • 100:$2.2500
  • 50:$2.4100
  • 25:$2.5800
  • 10:$2.7400
  • 1:$3.3000
SIHP180N60E-GE3
DISTI # 78-SIHP180N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant		1010
  • 1:$3.2700
  • 10:$2.7100
  • 100:$2.2300
  • 250:$2.1600
  • 500:$1.9400
  • 1000:$1.6300
  • 2500:$1.5500
  • 5000:$1.4900
SIHP180N60E-GE3
DISTI # 3019098		Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-220AB48
  • 500:£1.4500
  • 250:£1.6200
  • 100:£1.6700
  • 10:£2.0200
  • 1:£2.7500
SIHP180N60E-GE3
DISTI # 3019098		Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-220AB
RoHS: Compliant		48
  • 1000:$2.0700
  • 500:$2.2800
  • 250:$2.4200
  • 100:$2.5300
  • 10:$2.9700
  • 1:$3.7700
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MIC4452YN

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Mfr.#: MIC4452YN

OMO.#: OMO-MIC4452YN-MICROCHIP-TECHNOLOGY

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TPS54334DDAR

Mfr.#: TPS54334DDAR

OMO.#: OMO-TPS54334DDAR-TEXAS-INSTRUMENTS

 IC REG BUCK ADJUSTABLE 3A 8SOPWR
1N4148

Mfr.#: 1N4148

OMO.#: OMO-1N4148-ON-SEMICONDUCTOR

 Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
NTB110N65S3HF

Mfr.#: NTB110N65S3HF

OMO.#: OMO-NTB110N65S3HF-ON-SEMICONDUCTOR

 SUPERFET3 650V FRFET,110M
उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
SIHP180N60E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३.२७
US$ ३.२७
10
US$ २.७१
US$ २७.१०
100
US$ २.२३
US$ २२३.००
250
US$ २.१६
US$ ५४०.००
500
US$ १.९४
US$ ९७०.००
1000
US$ १.६३
US$ १ ६३०.००
2500
US$ १.५५
US$ ३ ८७५.००
5000
US$ १.४९
US$ ७ ४५०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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