SIDR140DP-T1-GE3

SIDR140DP-T1-GE3
Mfr. #:
SIDR140DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIDR140DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR140DP-T1-GE3 DatasheetSIDR140DP-T1-GE3 Datasheet (P4-P6)SIDR140DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIDR140DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8DC-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
25 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
670 uOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V, - 16 V
Qg - गेट चार्ज:
170 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
125 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SID
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
90 S
पतन समय:
9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
9 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
46 ns
सामान्य टर्न-अन ढिलाइ समय:
19 ns
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
भाग # Mfg। विवरण स्टक मूल्य
SIDR140DP-T1-GE3
DISTI # V99:2348_22587800
Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET PowerPAK SO-8 double cooling 1G SG 2mil , 0.67 m @ 10V m @ 7.5V 0.9 m @5990
  • 3000:$1.0786
  • 500:$1.3860
  • 100:$1.5526
  • 10:$2.0366
  • 1:$2.6928
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
18In Stock
  • 1000:$1.2491
  • 500:$1.5075
  • 100:$1.8348
  • 10:$2.2830
  • 1:$2.5400
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
18In Stock
  • 1000:$1.2491
  • 500:$1.5075
  • 100:$1.8348
  • 10:$2.2830
  • 1:$2.5400
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$1.1151
  • 3000:$1.1290
SIDR140DP-T1-GE3
DISTI # 31059629
Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET PowerPAK SO-8 double cooling 1G SG 2mil , 0.67 m @ 10V m @ 7.5V 0.9 m @5990
  • 3000:$1.1019
  • 500:$1.3471
  • 100:$1.5523
  • 10:$2.0165
  • 6:$2.6929
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3
Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET - Tape and Reel (Alt: SIDR140DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$1.0209
  • 30000:$1.0489
  • 18000:$1.0789
  • 12000:$1.1249
  • 6000:$1.1589
SIDR140DP-T1-GE3
DISTI # 81AC3428
Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET0
  • 10000:$0.9960
  • 6000:$1.0400
  • 4000:$1.0800
  • 2000:$1.2000
  • 1000:$1.2600
  • 1:$1.3400
SIDR140DP-T1-GE3
DISTI # 99AC9550
Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes50
  • 500:$1.4000
  • 250:$1.5000
  • 100:$1.6100
  • 50:$1.7600
  • 25:$1.9200
  • 10:$2.0700
  • 1:$2.4900
SIDR140DP-T1-GE3
DISTI # 78-SIDR140DP-T1-GE3
Vishay IntertechnologiesMOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC
RoHS: Compliant
5477
  • 1:$2.4700
  • 10:$2.0500
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1500
  • 3000:$1.0700
  • 6000:$1.0300
SIDR140DP-T1-GE3
DISTI # 3019067
Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO
RoHS: Compliant
50
  • 1000:$1.4900
  • 500:$1.6100
  • 250:$1.7800
  • 100:$1.9100
  • 10:$2.4000
  • 1:$3.1100
SIDR140DP-T1-GE3
DISTI # 3019067
Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO50
  • 500:£0.9960
  • 250:£1.1000
  • 100:£1.1800
  • 10:£1.4900
  • 1:£1.9300
छवि भाग # विवरण
DGD0506AFN-7

Mfr.#: DGD0506AFN-7

OMO.#: OMO-DGD0506AFN-7

Gate Drivers HV Gate Driver
MMBD1404

Mfr.#: MMBD1404

OMO.#: OMO-MMBD1404

Diodes - General Purpose, Power, Switching High Voltage General Purpose
SIDR680DP-T1-GE3

Mfr.#: SIDR680DP-T1-GE3

OMO.#: OMO-SIDR680DP-T1-GE3

MOSFET 80V Vds 20V Vgs PowerPAK SO-8DC
SIDR626DP-T1-GE3

Mfr.#: SIDR626DP-T1-GE3

OMO.#: OMO-SIDR626DP-T1-GE3

MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC
RSS100N03FRATB

Mfr.#: RSS100N03FRATB

OMO.#: OMO-RSS100N03FRATB

MOSFET Nch 30V Vds 10A 0.0135Rds(on) 14Qg
FDMS8050ET30

Mfr.#: FDMS8050ET30

OMO.#: OMO-FDMS8050ET30

MOSFET FET 30V 0.65 MOHM PQFN56
PIC16F15344-E/GZ

Mfr.#: PIC16F15344-E/GZ

OMO.#: OMO-PIC16F15344-E-GZ

8-bit Microcontrollers - MCU 7KB, 512B RAM, 4xPWMs, Comparator, DAC, ADC, CWG, 2 EUSART, SPI/I2C
SIRA90DP-T1-GE3

Mfr.#: SIRA90DP-T1-GE3

OMO.#: OMO-SIRA90DP-T1-GE3

MOSFET 30V Vds 100A Id Qg 48nC Typ.
SIDR626DP-T1-GE3

Mfr.#: SIDR626DP-T1-GE3

OMO.#: OMO-SIDR626DP-T1-GE3-VISHAY

MOSFET N-CHAN 60V
SIDR680DP-T1-GE3

Mfr.#: SIDR680DP-T1-GE3

OMO.#: OMO-SIDR680DP-T1-GE3-VISHAY

MOSFET N-CH 80V
उपलब्धता
स्टक:
Available
अर्डर मा:
1988
मात्रा प्रविष्ट गर्नुहोस्:
SIDR140DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.४७
US$ २.४७
10
US$ २.०५
US$ २०.५०
100
US$ १.५९
US$ १५९.००
500
US$ १.३९
US$ ६९५.००
1000
US$ १.१५
US$ १ १५०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • SIRA20DP TrenchFET® Gen IV MOSFET
    Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
  • P-Channel MOSFETs
    Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
  • Compare SIDR140DP-T1-GE3
    SIDR140DPT1GE3 vs SIDR220DPT1GE3 vs SIDR390DPT1GE3
  • SiP32452, SiP32453 Load Switch
    Vishay's load switches have a low input logic control threshold and a fast turn on time.
  • PowerPAIR®
    Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
Top