SIDR626DP-T1-GE3

Mfr. #:: SIDR626DP-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SIDR626DP-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SIDR626DP-T1-GE3 Datasheet SIDR626DP-T1-GE3 Datasheet (P4-P6)SIDR626DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:: SIDR626DP-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-SO-8DC-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 60 V

आईडी - निरन्तर ड्रेन वर्तमान:: 100 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 1.7 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2 V

Vgs - गेट-स्रोत भोल्टेज:: 10 V

Qg - गेट चार्ज:: 68 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 125 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET

प्याकेजिङ:: रील

शृङ्खला:: SID

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 78 S

पतन समय:: 11 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 24 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 30 ns

सामान्य टर्न-अन ढिलाइ समय:: 16 ns

Tags: SIDR62, SIDR6, SIDR, SID

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIDR626DP-T1-GE3 थप जानकारी

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs: Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SIDR626DP-T1-GE3 DISTI # V72:2272_21764850	Vishay Intertechnologies	SIDR626DP-T1-GE3	2884	75000:$1.2210 30000:$1.2250 15000:$1.2300 6000:$1.2340 3000:$1.2389 1000:$1.4620 500:$1.5750 250:$1.6400 100:$1.8220 50:$1.9070 25:$2.1189 10:$2.3540 1:$3.1064
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN 60V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5659In Stock	1000:$1.4396 500:$1.7374 100:$2.1147 10:$2.6310 1:$2.9300
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN 60V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5659In Stock	1000:$1.4396 500:$1.7374 100:$2.1147 10:$2.6310 1:$2.9300
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN 60V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	6000:$1.2852 3000:$1.3013
SIDR626DP-T1-GE3 DISTI # 31012431	Vishay Intertechnologies	SIDR626DP-T1-GE3	2884	1000:$1.3280 500:$1.5750 250:$1.6400 100:$1.8220 50:$1.9070 25:$2.1189 10:$2.3540 6:$3.1064
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIDR626DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$1.0900 12000:$1.1900 18000:$1.1900 30000:$1.1900 6000:$1.2900
SIDR626DP-T1-GE3 DISTI # 59AC7338	Vishay Intertechnologies	N-CHANNEL 60-V (D-S) MOSFET	0	10000:$1.1500 6000:$1.2000 4000:$1.2400 2000:$1.3800 1000:$1.4500 1:$1.5500
SIDR626DP-T1-GE3 DISTI # 78AC6503	Vishay Intertechnologies	MOSFET, N-CH, 60V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes	5840	500:$1.6200 250:$1.7300 100:$1.8500 50:$2.0300 25:$2.2100 10:$2.3900 1:$2.8800
SIDR626DP-T1-GE3 DISTI # 78-SIDR626DP-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant	5635	1:$2.8500 10:$2.3700 100:$1.8300 500:$1.6000 1000:$1.3300 3000:$1.2400 6000:$1.1900
SIDR626DP-T1-GE3 DISTI # 2932898	Vishay Intertechnologies	MOSFET, N-CH, 60V, 100A, 150DEG C, 125W RoHS: Compliant	5840	1000:$2.7900 500:$2.9400 250:$3.1300 100:$3.4100 10:$3.9300 1:$4.5100
SIDR626DP-T1-GE3 DISTI # 2932898	Vishay Intertechnologies	MOSFET, N-CH, 60V, 100A, 150DEG C, 125W	5840	500:£1.2500 250:£1.2900 100:£1.3400 10:£1.7400 1:£2.3600

सम्बन्धित उत्पादनहरु

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	Mfr.#: MSP-EXP430FR2433 OMO.#: OMO-MSP-EXP430FR2433-TEXAS-INSTRUMENTS	LAUNCHPAD MSP430FR2433 EVAL BRD
	Mfr.#: LAUNCHXL-F280049C OMO.#: OMO-LAUNCHXL-F280049C-TEXAS-INSTRUMENTS	LAUNCHPAD TMS320F280049C EVAL BD
	Mfr.#: R12P22005D OMO.#: OMO-R12P22005D-RECOM-POWER	2 Watt DC to DC Converte

उपलब्धता

स्टक:: Available
अर्डर मा:: 1988
मात्रा प्रविष्ट गर्नुहोस्:

SIDR626DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.८५~~; ~~US$ २.८५~~

10: ~~US$ २.३७~~; ~~US$ २३.७०~~

100: ~~US$ १.८३~~; ~~US$ १८३.००~~

500: ~~US$ १.६०~~; ~~US$ ८००.००~~

1000: ~~US$ १.३३~~; ~~US$ १ ३३०.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SIDR62 3
SIDR6 8
SIDR 16
SID 415

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SIDR626DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes