OMO ElectronicOMO Electronic
Expand menu
0 कार्ट

IXFN26N90

IXFN26N90
Mfr. #:
IXFN26N90
निर्माता:
Littelfuse
विवरण:
MOSFET 900V 26A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFN26N90 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
चेसिस माउन्ट
प्याकेज / केस:
SOT-227-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
900 V
आईडी - निरन्तर ड्रेन वर्तमान:
26 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
300 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
600 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
HyperFET
प्याकेजिङ:
ट्यूब
उचाइ:
9.6 mm
लम्बाइ:
38.23 mm
शृङ्खला:
IXFN26N90
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
25.42 mm
ब्रान्ड:
IXYS
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
28 S
पतन समय:
24 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
35 ns
कारखाना प्याक मात्रा:
10
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
130 ns
सामान्य टर्न-अन ढिलाइ समय:
60 ns
एकाइ वजन:
1.058219 oz
Tags
IXFN26N, IXFN26, IXFN2, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 26 A, 900 V, 300 Mohm, 10 V, 5 V Rohs Compliant: Yes
***inecomponents.com
Trans MOSFET N-CH 900V 26A 4-Pin SOT-227B
***ment14 APAC
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:900V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:600W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:ISOTOP; No. of Pins:3; Avalanche Single Pulse Energy Eas:3J; Current Id Max:26A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:300mohm; Package / Case:ISOTOP; Power Dissipation Pd:600W; Power Dissipation Pd:600W; Pulse Current Idm:104A; Rate of Voltage Change dv / dt:5Vµs; Repetitive Avalanche Energy Max:64mJ; Termination Type:Screw; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Weight:0.044kg
भाग # Mfg। विवरण स्टक मूल्य
IXFN26N90
DISTI # V99:2348_17750909		IXYS CorporationTrans MOSFET N-CH 900V 26A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN26N90
    DISTI # IXFN26N90-ND    		IXYS CorporationMOSFET N-CH 900V 26A SOT-227B
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		175In Stock
    • 100:$26.9864
    • 30:$29.0360
    • 10:$31.5980
    • 1:$34.1600
    IXFN26N90
    DISTI # 14J1685    		IXYS CorporationMOSFET Transistor, N Channel, 26 A, 900 V, 300 mohm, 10 V, 5 V RoHS Compliant: Yes0
      IXFN26N90
      DISTI # 747-IXFN26N90      		IXYS CorporationMOSFET 900V 26A
      RoHS: Compliant      		0
      • 20:$31.6000
      • 30:$29.0400
      • 50:$27.8000
      • 100:$26.9900
      • 200:$24.7700
      IXFN26N90
      DISTI # 4905570      		IXYS CorporationMOSFET, N, SOT-227B
      RoHS: Compliant      		0
      • 250:$37.5200
      • 100:$40.8900
      • 30:$43.9900
      • 10:$47.8700
      • 1:$51.7500
      छवि भाग # विवरण
      IXFN180N15P

      Mfr.#: IXFN180N15P

      OMO.#: OMO-IXFN180N15P

      		 MOSFET 180 Amps 150V 0.011 Rds
      IXFN360N15T2

      Mfr.#: IXFN360N15T2

      OMO.#: OMO-IXFN360N15T2

      		 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
      IXFN44N80P

      Mfr.#: IXFN44N80P

      OMO.#: OMO-IXFN44N80P

      		 MOSFET 36 Amps 800V
      IXFN80N50Q3

      Mfr.#: IXFN80N50Q3

      OMO.#: OMO-IXFN80N50Q3

      		 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
      IXFN300N10P

      Mfr.#: IXFN300N10P

      OMO.#: OMO-IXFN300N10P

      		 MOSFET Polar Power MOSFET HiPerFET
      IXFN44N50U3

      Mfr.#: IXFN44N50U3

      OMO.#: OMO-IXFN44N50U3-IXYS-CORPORATION

      		 MOSFET N-CH 500V 44A SOT-227B
      IXFN48N45

      Mfr.#: IXFN48N45

      OMO.#: OMO-IXFN48N45-1190

      		 नयाँ र मौलिक
      IXFN80N50P

      Mfr.#: IXFN80N50P

      OMO.#: OMO-IXFN80N50P-IXYS-CORPORATION

      		 MOSFET N-CH 500V 66A SOT-227
      IXFN73N30

      Mfr.#: IXFN73N30

      OMO.#: OMO-IXFN73N30-IXYS-CORPORATION

      		 MOSFET 300V 73A
      IXFN100N20

      Mfr.#: IXFN100N20

      OMO.#: OMO-IXFN100N20-IXYS-CORPORATION

      		 MOSFET 100 Amps 200V 0.023 Rds
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      3500
      मात्रा प्रविष्ट गर्नुहोस्:
      IXFN26N90 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      20
      US$ ३१.६०
      US$ ६३२.००
      30
      US$ २९.०४
      US$ ८७१.२०
      50
      US$ २७.८०
      US$ १ ३९०.००
      100
      US$ २६.९९
      US$ २ ६९९.००
      200
      US$ २४.७७
      US$ ४ ९५४.००
      500
      US$ २३.५७
      US$ ११ ७८५.००
      बाट सुरु गर्नुहोस्
      नवीनतम उत्पादनहरू
      More Newest Products
      Top