IPB027N10N3 G

IPB027N10N3 G
Mfr. #:
IPB027N10N3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB027N10N3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB027N10N3 G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
120 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.3 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
206 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
300 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
94 S
पतन समय:
28 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
58 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
84 ns
सामान्य टर्न-अन ढिलाइ समय:
34 ns
भाग # उपनाम:
IPB027N10N3GATMA1 IPB27N1N3GXT SP000506508
एकाइ वजन:
0.139332 oz
Tags
IPB027N10N3, IPB027, IPB02, IPB0, IPB
Service Guarantees

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB027N10N3GATMA1
DISTI # V72:2272_06377077
Infineon Technologies AGTrans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
601
  • 500:$2.7250
  • 250:$3.3290
  • 100:$3.6080
  • 25:$3.9880
  • 10:$4.0330
  • 1:$4.7620
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2759In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2759In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
2000In Stock
  • 1000:$3.0845
IPB027N10N3 G
DISTI # 30581325
Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263
RoHS: Compliant
1560
  • 50:$3.4935
  • 10:$4.6792
  • 4:$6.9615
IPB027N10N3GATMA1
DISTI # 31343658
Infineon Technologies AGTrans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
601
  • 3:$4.7620
IPB027N10N3 G
DISTI # IPB027N10N3 G
Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: IPB027N10N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 1000
  • 1000:$2.8613
  • 2000:$2.7818
  • 3000:$2.7066
  • 5000:$2.6354
  • 10000:$2.6012
  • 25000:$2.5678
  • 50000:$2.5353
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.6900
  • 2000:$2.6900
  • 4000:$2.6900
  • 6000:$2.6900
  • 10000:$2.6900
IPB027N10N3GATMA1.
DISTI # 27AC6718
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$2.6900
IPB027N10N3GATMA1
DISTI # 85X6013
Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes2
  • 1:$5.8400
  • 10:$4.9600
  • 25:$4.7400
  • 50:$4.5200
  • 100:$4.3000
  • 250:$4.0800
  • 500:$3.6600
  • 1000:$3.0900
IPB027N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
10
  • 1000:$2.4200
  • 500:$2.5500
  • 100:$2.6500
  • 25:$2.7700
  • 1:$2.9800
IPB027N10N3 G
DISTI # 726-IPB027N10N3G
Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
RoHS: Compliant
0
  • 1:$5.3100
  • 10:$4.5100
  • 100:$3.9100
  • 250:$3.7100
  • 500:$3.3300
  • 1000:$2.8100
IPB027N10N3GATMA1
DISTI # 726-IPB027N10N3GATMA
Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
RoHS: Compliant
50
  • 1:$5.3100
  • 10:$4.5100
  • 100:$3.9100
  • 250:$3.7100
  • 500:$3.3300
  • 1000:$2.8100
IPB027N10N3GATMA1
DISTI # 8259235P
Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, RL922
  • 10:£2.9900
  • 50:£2.7250
  • 250:£2.4600
  • 500:£2.2150
IPB027N10N3GATMA1
DISTI # 8259235
Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, PK184
  • 2:£3.9150
  • 10:£2.9900
  • 50:£2.7250
  • 250:£2.4600
  • 500:£2.2150
IPB027N10N3GInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 120A I(D), 100V, 0.0027OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB46
  • 9:$2.4000
  • 3:$3.2000
  • 1:$4.8000
IPB027N10N3GInfineon Technologies AG 144
    IPB027N10N3GInfineon Technologies AG 58
    • 2:$3.5840
    • 8:$2.3296
    • 23:$1.7920
    IPB027N10N3 GInfineon Technologies AG 354
      IPB027N10N3 GInfineon Technologies AGRoHS(ship within 1day)300
      • 1:$5.5000
      • 10:$4.6900
      • 50:$4.0600
      • 100:$3.8800
      • 500:$3.7200
      • 1000:$3.6400
      IPB027N10N3GATMA1
      DISTI # C1S322000524457
      Infineon Technologies AGTrans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant
      601
      • 1:$3.6400
      IPB027N10N3 G
      DISTI # C1S322000194070
      Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant
      1560
      • 50:$2.7400
      • 10:$3.6700
      • 1:$5.4600
      IPB027N10N3GATMA1
      DISTI # 2443379
      Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
      RoHS: Compliant
      0
      • 1:$8.4000
      • 10:$7.1400
      • 100:$6.1900
      • 250:$5.8700
      • 500:$5.2800
      • 1000:$4.4500
      IPB027N10N3GATMA1
      DISTI # 2443379RL
      Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
      RoHS: Compliant
      0
      • 1:$8.4000
      • 10:$7.1400
      • 100:$6.1900
      • 250:$5.8700
      • 500:$5.2800
      • 1000:$4.4500
      IPB027N10N3GATMA1
      DISTI # 2443379
      Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
      RoHS: Compliant
      99
      • 1:£3.9600
      • 10:£2.7600
      • 100:£2.6200
      • 250:£2.4800
      • 500:£2.2400
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      BC547BTA

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      OMO.#: OMO-BC547BTA

      Bipolar Transistors - BJT NPN 45V 100mA HFE/450
      BZX79C18-T50A

      Mfr.#: BZX79C18-T50A

      OMO.#: OMO-BZX79C18-T50A

      Zener Diodes 18V 0.5W Zener
      BZX79C2V7

      Mfr.#: BZX79C2V7

      OMO.#: OMO-BZX79C2V7

      Zener Diodes Zener Diode
      1N4148TA

      Mfr.#: 1N4148TA

      OMO.#: OMO-1N4148TA

      Diodes - General Purpose, Power, Switching Hi Conductance Fast
      LM78L05ACZ/NOPB

      Mfr.#: LM78L05ACZ/NOPB

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      DIODE ZENER 18V 500MW DO35
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      Photodiode Output Optocouplers 2 Form A Photo Voltaic Isolato
      BZX79C2V7

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      Zener Diodes Zener Diode
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1993
      मात्रा प्रविष्ट गर्नुहोस्:
      IPB027N10N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ५.३०
      US$ ५.३०
      10
      US$ ४.५०
      US$ ४५.००
      100
      US$ ३.९०
      US$ ३९०.००
      250
      US$ ३.७०
      US$ ९२५.००
      500
      US$ ३.३२
      US$ १ ६६०.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
      बाट सुरु गर्नुहोस्
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