SGH80N60UFDTU

SGH80N60UFDTU
Mfr. #:
SGH80N60UFDTU
निर्माता:
ON Semiconductor / Fairchild
विवरण:
IGBT Transistors N-CH/100V/0.58/28A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SGH80N60UFDTU डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-3P-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
600 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2.1 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
80 A
Pd - शक्ति अपव्यय:
195 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
SGH80N60UFD
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
80 A
उचाइ:
18.9 mm
लम्बाइ:
15.8 mm
चौडाइ:
5 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
निरन्तर कलेक्टर वर्तमान:
80 A
गेट-एमिटर चुहावट वर्तमान:
+/- 100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
30
उपश्रेणी:
IGBTs
एकाइ वजन:
0.225789 oz
Tags
SGH80N60UFD, SGH80N60U, SGH80, SGH8, SGH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3P(N) Rail
***rchild Semiconductor
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
***nell
IGBT; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:80A; Voltage, Vce Sat Max:2.6V; Power Dissipation:195W; Case Style:TO-3P; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:220A; Device Marking:SGH80N60UFDTU; No. of Pins:3; Pin Format:GCE; Power, Pd:195W; Power, Ptot:195W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:50ns; Time, Rise:50ns; Transistors, No. of:1
भाग # Mfg। विवरण स्टक मूल्य
SGH80N60UFDTU
DISTI # SGH80N60UFDTU-ND
ON SemiconductorIGBT 600V 80A 195W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube
Limited Supply - Call
    SGH80N60UFDTU
    DISTI # 512-SGH80N60UFDTU
    ON SemiconductorIGBT Transistors N-CH/100V/0.58/28A
    RoHS: Compliant
    0
      SGH80N60UFDTU
      DISTI # 1057675
      ON SemiconductorIGBT, 600V, 80A, TO-3P
      RoHS: Compliant
      0
      • 1000:$5.4200
      • 500:$6.2700
      • 250:$6.8100
      • 100:$7.4400
      • 25:$8.2000
      • 1:$9.4100
      छवि भाग # विवरण
      SGH80N60UFTU

      Mfr.#: SGH80N60UFTU

      OMO.#: OMO-SGH80N60UFTU

      IGBT Transistors Dis High Perf IGBT
      SGH80N60UFDTU

      Mfr.#: SGH80N60UFDTU

      OMO.#: OMO-SGH80N60UFDTU

      IGBT Transistors N-CH/100V/0.58/28A
      SGH80N60

      Mfr.#: SGH80N60

      OMO.#: OMO-SGH80N60-1190

      नयाँ र मौलिक
      SGH80N60RUFD

      Mfr.#: SGH80N60RUFD

      OMO.#: OMO-SGH80N60RUFD-1190

      नयाँ र मौलिक
      SGH80N60UF

      Mfr.#: SGH80N60UF

      OMO.#: OMO-SGH80N60UF-1190

      नयाँ र मौलिक
      SGH80N60UFD

      Mfr.#: SGH80N60UFD

      OMO.#: OMO-SGH80N60UFD-1190

      नयाँ र मौलिक
      SGH80N60UFD G80N60UFD

      Mfr.#: SGH80N60UFD G80N60UFD

      OMO.#: OMO-SGH80N60UFD-G80N60UFD-1190

      नयाँ र मौलिक
      SGH80N60UFDFSC

      Mfr.#: SGH80N60UFDFSC

      OMO.#: OMO-SGH80N60UFDFSC-1190

      नयाँ र मौलिक
      SGH80N60UFDTU  +

      Mfr.#: SGH80N60UFDTU +

      OMO.#: OMO-SGH80N60UFDTU--1190

      नयाँ र मौलिक
      SGH80N60UFTU

      Mfr.#: SGH80N60UFTU

      OMO.#: OMO-SGH80N60UFTU-ON-SEMICONDUCTOR

      IGBT 600V 80A 195W TO3P
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4000
      मात्रा प्रविष्ट गर्नुहोस्:
      SGH80N60UFDTU को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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