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RN1102MFV(TPL3)

RN1102MFV(TPL3)
Mfr. #:
RN1102MFV(TPL3)
निर्माता:
Toshiba
विवरण:
Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
RN1102MFV(TPL3) डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
तोशिबा
उत्पादन कोटि:
द्विध्रुवी ट्रान्जिस्टर - पूर्व-पक्षपाती
RoHS:
Y
कन्फिगरेसन:
एकल
ट्रान्जिस्टर ध्रुवता:
NPN
विशिष्ट इनपुट प्रतिरोधक:
10 kOhms
विशिष्ट प्रतिरोधी अनुपात:
1
माउन्टिङ शैली:
SMD/SMT
DC कलेक्टर/बेस गेन hfe न्यूनतम:
50
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
50 V
निरन्तर कलेक्टर वर्तमान:
100 mA
पीक डीसी कलेक्टर वर्तमान:
100 mA
Pd - शक्ति अपव्यय:
150 mW
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
RN1102
प्याकेजिङ:
रील
DC वर्तमान लाभ hFE अधिकतम:
50
ब्रान्ड:
तोशिबा
उत्पादन प्रकार:
BJTs - द्विध्रुवी ट्रान्जिस्टर - पूर्व-पक्षपाती
कारखाना प्याक मात्रा:
8000
उपश्रेणी:
ट्रान्जिस्टरहरू
Tags
RN1102M, RN1102, RN110, RN11, RN1
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R
*** Americas
Bias resistor built-in transistor (BRT)
भाग # Mfg। विवरण स्टक मूल्य
RN1102MFV(TPL3)
DISTI # RN1102MFV(TPL3)		Toshiba America Electronic ComponentsTrans Digital BJT NPN 50V 100mA 3-Pin VESM T/R - Tape and Reel (Alt: RN1102MFV(TPL3))
RoHS: Compliant
Min Qty: 8000
Container: Reel		Americas - 0
    RN1102MFV(TPL3)
    DISTI # 757-RN1102MFV(TPL3)    		Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms
    RoHS: Compliant    		0
      RN1102MFV(TPL3)
      DISTI # 580058      		Toshiba America Electronic ComponentsTR.+VIASRES. NPN VCEO=50V IC=150MA VESM, PK150
      • 50:£0.0540
      • 200:£0.0320
      • 500:£0.0290
      • 1000:£0.0280
      • 2000:£0.0280
      छवि भाग # विवरण
      RN1102MFV,L3F

      Mfr.#: RN1102MFV,L3F

      OMO.#: OMO-RN1102MFV-L3F

      		 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
      RN1102MFV(TPL3)

      Mfr.#: RN1102MFV(TPL3)

      OMO.#: OMO-RN1102MFV-TPL3-

      		 Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms
      RN1102MFV,L3F

      Mfr.#: RN1102MFV,L3F

      OMO.#: OMO-RN1102MFV-L3F-TOSHIBA-SEMICONDUCTOR-AND-STOR

      		 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
      RN1102MFVL3FCT-ND

      Mfr.#: RN1102MFVL3FCT-ND

      OMO.#: OMO-RN1102MFVL3FCT-ND-1190

      		 नयाँ र मौलिक
      RN1102MFVL3FDKR-ND

      Mfr.#: RN1102MFVL3FDKR-ND

      OMO.#: OMO-RN1102MFVL3FDKR-ND-1190

      		 नयाँ र मौलिक
      RN1102MFVL3FTR-ND

      Mfr.#: RN1102MFVL3FTR-ND

      OMO.#: OMO-RN1102MFVL3FTR-ND-1190

      		 नयाँ र मौलिक
      RN1102MFV,L3F(B

      Mfr.#: RN1102MFV,L3F(B

      OMO.#: OMO-RN1102MFV-L3F-B-1190

      		 Pre-Biased BJT
      RN1102MFVL3F

      Mfr.#: RN1102MFVL3F

      OMO.#: OMO-RN1102MFVL3F-1190

      		 Bipolar Transistors - Pre-Biased TRANSISTOR PD=150MW F=1MHZ
      RN1102MFV

      Mfr.#: RN1102MFV

      OMO.#: OMO-RN1102MFV-1190

      		 नयाँ र मौलिक
      RN1102MFV TPL3

      Mfr.#: RN1102MFV TPL3

      OMO.#: OMO-RN1102MFV-TPL3-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4500
      मात्रा प्रविष्ट गर्नुहोस्:
      RN1102MFV(TPL3) को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      बाट सुरु गर्नुहोस्
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