 |  |  | |
| PartNumber | RN1101,LF(CT | RN1101(T5L,F,T) | RN1101MFV(TPL3) |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built- in Transistor | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Series | RN1101 | RN1101 | RN1101 |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 3000 | 3000 | 8000 |
| Subcategory | Transistors | Transistors | Transistors |
| Configuration | - | Single | Single |
| Transistor Polarity | - | NPN | NPN |
| Typical Input Resistor | - | 4.7 kOhms | 4.7 kOhms |
| Typical Resistor Ratio | - | 1 | 1 |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | SOT-416-3 | - |
| DC Collector/Base Gain hfe Min | - | 30 | 30 |
| Collector Emitter Voltage VCEO Max | - | 50 V | 50 V |
| Continuous Collector Current | - | 100 mA | 100 mA |
| Pd Power Dissipation | - | 100 mW | 150 mW |
| Emitter Base Voltage VEBO | - | 10 V | - |
| Maximum DC Collector Current | - | 100 mA | - |
| Unit Weight | - | 0.000212 oz | - |
| Peak DC Collector Current | - | - | 100 mA |
| Maximum Operating Temperature | - | - | + 150 C |
| DC Current Gain hFE Max | - | - | 30 |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba |
RN1101MFV,L3F | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms | |
| RN1102,LF(CT | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | ||
| RN1101,LF(CT | Bipolar Transistors - Pre-Biased Bias Resistor Built- in Transistor | ||
| RN1101(T5L,F,T) | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | ||
| RN1101MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms | ||
| RN1102,LF(CT | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto | ||
| RN1101(T5L,F,T) | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | ||
| RN1101FS(TPL3) | Bipolar Transistors - Pre-Biased 50mA 20volts 3Pin 4.7K x 4.7Kohms | ||
| RN1101MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms | ||
| RN1101ACT | नयाँ र मौलिक | ||
| RN1101CT | नयाँ र मौलिक | ||
| RN1102ACT | नयाँ र मौलिक | ||
| RN1101MFVL3XGF | नयाँ र मौलिक | ||
| RN1101,LF(CTCT-ND | नयाँ र मौलिक | ||
| RN1101,LF(CTDKR-ND | नयाँ र मौलिक | ||
| RN1101,LF(CTTR-ND | नयाँ र मौलिक | ||
| RN1101ACT(TPL3)CT-ND | नयाँ र मौलिक | ||
| RN1101ACT(TPL3)DKR-ND | नयाँ र मौलिक | ||
| RN1101ACT(TPL3)TR-ND | नयाँ र मौलिक | ||
| RN1101CT(TPL3)CT-ND | नयाँ र मौलिक | ||
| RN1101CT(TPL3)DKR-ND | नयाँ र मौलिक | ||
| RN1101CT(TPL3)TR-ND | नयाँ र मौलिक | ||
| RN1101MFVL3FCT-ND | नयाँ र मौलिक | ||
| RN1101MFVL3FDKR-ND | नयाँ र मौलिक | ||
| RN1101MFVL3FTR-ND | नयाँ र मौलिक | ||
| RN1102ACT(TPL3)CT-ND | नयाँ र मौलिक | ||
| RN1102ACT(TPL3)DKR-ND | नयाँ र मौलिक | ||
| RN1102ACT(TPL3)TR-ND | नयाँ र मौलिक | ||
| RN1101,LF(CT | TRANS PREBIAS NPN 0.1W SSM | ||
| RN1101FS(TPL3 ) | नयाँ र मौलिक | ||
| RN1101(F) | TRANSISTOR DIGITAL NPN RN1101(F), PK | ||
| RN11-6 4B504J | नयाँ र मौलिक | ||
| RN11-6 6B203J | नयाँ र मौलिक | ||
| RN1101 | नयाँ र मौलिक | ||
| RN1101 TE85L | नयाँ र मौलिक | ||
| RN1101(T5LFT | नयाँ र मौलिक | ||
| RN1101(T5LFT) | नयाँ र मौलिक | ||
| RN1101(TE85L) | नयाँ र मौलिक | ||
| RN1101(TE85LF) | नयाँ र मौलिक | ||
| RN1101(XA) | नयाँ र मौलिक | ||
| RN1101/XA | नयाँ र मौलिक | ||
| RN1101F | नयाँ र मौलिक | ||
| RN1101FS | नयाँ र मौलिक | ||
| RN1101FT | नयाँ र मौलिक | ||
| RN1101FT(TE85L F) | नयाँ र मौलिक | ||
| RN1101MFV | नयाँ र मौलिक | ||
| RN1102 | नयाँ र मौलिक | ||
| RN1102(T5L,F,T) | नयाँ र मौलिक | ||
| RN1102(T5LNK,F,T) | नयाँ र मौलिक | ||
| RN1102(TE85L,F) | नयाँ र मौलिक |