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STH315N10F7-2

STH315N10F7-2
Mfr. #:
STH315N10F7-2
निर्माता:
STMicroelectronics
विवरण:
Darlington Transistors MOSFET POWER MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STH315N10F7-2 डाटा पाना
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STH315N10F7-2 थप जानकारी STH315N10F7-2 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
N- च्यानल STripFET
प्याकेजिङ
रील
एकाइ - वजन
0.139332 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
TO-252-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
315 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
40 ns
उदय-समय
108 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
180 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
3.5 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
2.3 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
148 ns
सामान्य-टर्न-अन-डिले-समय
62 ns
Qg-गेट-चार्ज
180 nC
Tags
STH315, STH31, STH3, STH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
***ical
Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
***nell
MOSFET, N CH, 100V, 180A, H2PAK-3; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:315W; Transistor Case Style:H2PAK; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
STH315N10F7 STripFET VII DeepGATE Power MOSFETs
STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs are AEC-Q101 automotive-qualified N-channel Power MOSFETs that combine best-in-class on-state resistance with low internal capacitances and gate charge, enhancing both conduction and switching efficiency. Available in TO-220 or 2-lead or 6-lead H2PAK industry-standard packages, these devices help designers reduce board size and maximize power density. STH315N10F7 MOSFETs also have high avalanche ruggedness to survive potentially damaging conditions. With a 100V rating, these STripFET VII DeepGATE MOSFETs provide an adequate safety margin to withstand typical over-voltage surges. STH315N10F7 STripFET VII DeepGATE MOSFETs are also well-suited for highly rugged performance in automotive and switching applications.
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STripFET™ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
भाग # Mfg। विवरण स्टक मूल्य
STH315N10F7-2
DISTI # V72:2272_18459496		STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		370
  • 250:$3.3550
  • 100:$3.5400
  • 25:$4.0030
  • 10:$4.0480
  • 1:$4.6449
STH315N10F7-2
DISTI # 497-14718-1-ND		STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1938In Stock
  • 500:$3.8706
  • 100:$4.7800
  • 10:$5.8290
  • 1:$6.5300
STH315N10F7-2
DISTI # 497-14718-6-ND		STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1938In Stock
  • 500:$3.8706
  • 100:$4.7800
  • 10:$5.8290
  • 1:$6.5300
STH315N10F7-2
DISTI # 497-14718-2-ND		STMicroelectronicsMOSFET N-CH 100V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$3.1693
STH315N10F7-2
DISTI # 31227438		STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		370
  • 250:$3.3550
  • 100:$3.5400
  • 25:$4.0030
  • 10:$4.0480
  • 3:$4.6449
STH315N10F7-2
DISTI # 30613954		STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		64
  • 50:$3.1492
  • 10:$3.7230
  • 4:$6.4005
STH315N10F7-2
DISTI # STH315N10F7-2		STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R - Tape and Reel (Alt: STH315N10F7-2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.9900
  • 2000:$2.8900
  • 4000:$2.7900
  • 6000:$2.5900
  • 10000:$2.5900
STH315N10F7-2
DISTI # 511-STH315N10F7-2		STMicroelectronicsMOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
RoHS: Compliant		967
  • 1:$5.4500
  • 10:$4.6300
  • 100:$4.0200
  • 250:$3.8100
  • 500:$3.4200
  • 1000:$2.8900
STH315N10F7-2
DISTI # C1S730201165861		STMicroelectronicsMOSFETs
RoHS: Compliant		370
  • 1:$3.3700
STH315N10F7-2
DISTI # C1S730200906207		STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		64
  • 50:$2.4700
  • 10:$2.9200
  • 1:$5.0200
छवि भाग # विवरण
STH315N10F7-2

Mfr.#: STH315N10F7-2

OMO.#: OMO-STH315N10F7-2

 MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
STH315N10F7-6

Mfr.#: STH315N10F7-6

OMO.#: OMO-STH315N10F7-6

 MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
STH315N10F7-2

Mfr.#: STH315N10F7-2

OMO.#: OMO-STH315N10F7-2-STMICROELECTRONICS

 Darlington Transistors MOSFET POWER MOSFET
STH315N10F7-6

Mfr.#: STH315N10F7-6

OMO.#: OMO-STH315N10F7-6-STMICROELECTRONICS

 IGBT Transistors MOSFET POWER MOSFET
STH315-YFAA

Mfr.#: STH315-YFAA

OMO.#: OMO-STH315-YFAA-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
STH315N10F7-2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३.७०
US$ ३.७०
10
US$ ३.५२
US$ ३५.२०
100
US$ ३.३३
US$ ३३३.४५
500
US$ ३.१५
US$ १ ५७४.६५
1000
US$ २.९६
US$ २ ९६४.००
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