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| PartNumber | US6M2GTR |
| Description | MOSFET 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode |
| Manufacturer | ROHM Semiconductor |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | TUMT-6 |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V, 20 V |
| Id Continuous Drain Current | 1.5 A, 1 A |
| Rds On Drain Source Resistance | 170 mOhms, 280 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V, 2 V |
| Vgs Gate Source Voltage | 4.5 V |
| Qg Gate Charge | 1.6 nC, 2.1 nC |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 1 W |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Packaging | Reel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Brand | ROHM Semiconductor |
| Fall Time | 6 ns, 10 ns |
| Product Type | MOSFET |
| Rise Time | 9 ns, 8 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 15 ns, 25 ns |
| Typical Turn On Delay Time | 7 ns, 9 ns |