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| PartNumber | TC58NYG0S3HBAI6 | TC58NYG1S3EBAI5 | TC58NYG0S3EBAI4 |
| Description | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM) | NAND Flash 1.8V 1Gb 43nm SLC NAND (EEPROM) |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | NAND Flash | NAND Flash | NAND Flash |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | VFBGA-67 | TFBGA-63 | TFBGA-63 |
| Memory Size | 1 Gbit | 2 Gbit | 1 Gbit |
| Interface Type | Parallel | Parallel | Parallel |
| Organization | 128 M x 8 | 256 M x 8 | 128 M x 8 |
| Data Bus Width | 8 bit | 8 bit | 8 bit |
| Supply Voltage Min | 1.7 V | 1.7 V | 1.7 V |
| Supply Voltage Max | 1.95 V | 1.95 V | 1.95 V |
| Supply Current Max | 30 mA | 30 mA | 30 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Packaging | Tray | Tray | Tray |
| Memory Type | NAND | NAND | NAND |
| Brand | Toshiba Memory | Toshiba Memory | Toshiba Memory |
| Maximum Clock Frequency | - | - | - |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | NAND Flash | NAND Flash | NAND Flash |
| Factory Pack Quantity | 338 | 180 | 210 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Timing Type | - | Synchronous | Synchronous |
| Product | - | NAND Flash | NAND Flash |
| Speed | - | 25 ns | 25 ns |
| Architecture | - | Block Erase | Block Erase |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58NYG2S0HBAI6 | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | |
| TC58NYG2S0HBAI4 | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | ||
| TC58NYG0S3HBAI6 | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | ||
| TC58NYG1S3HBAI6 | NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM) | ||
| TC58NYG1S3HBAI4 | NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM) | ||
| TC58NYG2S3EBAI5 | NAND Flash 1.8V 4Gb 43nm SLC NAND (EEPROM) | ||
| TC58NYG1S3EBAI5 | NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM) | ||
| TC58NYG0S3EBAI4 | NAND Flash 1.8V 1Gb 43nm SLC NAND (EEPROM) | ||
| TC58NYG0S3EBAI4 | SLC NAND Flash Serial 1.8V 1Gbit 128M x 8bit 63-Pin TFBGA - Trays (Alt: TC58NYG0S3EBAI4) | ||
| TC58NYG1S3HBAI6 | EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM | ||
| TC58NYG2S0HBAI6 | EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM | ||
| TC58NYG0S3HBAI6 | EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM | ||
| TC58NYG2S0HBAI4 | Flash Memory 4Gb 1.8V SLC NAND Flash Serial EEPROM | ||
| TC58NYG1S3HBAI4 | Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM | ||
| TC58NYG1S3EBAI5 | Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM | ||
| TC58NYG2S3EBAI5 | Flash Memory 8Gb 1.8V SLC NAND Flash Serial EEPROM | ||
| TC58NVG4S2FTA00 | नयाँ र मौलिक | ||
| TC58NVG4T2DTG00 | नयाँ र मौलिक | ||
| TC58NVG5D2ETA00 | नयाँ र मौलिक | ||
| TC58NVG5H2HTA00 | नयाँ र मौलिक | ||
| TC58NVG6D2ETA00 | नयाँ र मौलिक | ||
| TC58NVGOS3EBA14 | नयाँ र मौलिक | ||
| TC58NVGOS3EBA17 | नयाँ र मौलिक | ||
| TC58NVGOS3EBAI4 | नयाँ र मौलिक | ||
| TC58NVGS0S3ETA0B | नयाँ र मौलिक | ||
| TC58NVM9S3EBAI4 | नयाँ र मौलिक | ||
| TC58NVM9S3EBAI4JAH | EEPROM, 64MX8, 25ns, Parallel, CMOS, PBGA63 | ||
| TC58NYG0S3EBA14 | नयाँ र मौलिक | ||
| TC58NYG1S3HBAI4_TRAY | नयाँ र मौलिक | ||
| TC58NYG1S8EBAI4 | नयाँ र मौलिक | ||
| TC58NYG1S8HBAI6 | नयाँ र मौलिक | ||
| TC58NYG1S8HBAI6/2GBIT | नयाँ र मौलिक | ||
| TC58NYG1S8HBAI6JD2 | नयाँ र मौलिक | ||
| TC58NYG0S3HBAI6-ND | नयाँ र मौलिक | ||
| TC58NYG1S3HBAI4-ND | नयाँ र मौलिक | ||
| TC58NYG1S3HBAI6-ND | नयाँ र मौलिक | ||
| TC58NYG2S0HBAI4-ND | नयाँ र मौलिक | ||
| TC58NYG2S0HBAI6-ND | नयाँ र मौलिक | ||
| TC58NVG5D2F | नयाँ र मौलिक | ||
| TC58NVG5D2FTA00 | नयाँ र मौलिक | ||
| TC58NVG5D2HTA00 | नयाँ र मौलिक | ||
| TC58NVG5D2HTA08 | नयाँ र मौलिक | ||
| TC58NVGOS3AFT05 | नयाँ र मौलिक | ||
| TC58NVGOS3ETA00 | नयाँ र मौलिक | ||
| TC58NYG2S0FBAI4 | नयाँ र मौलिक | ||
| TC58NYG2S3ETAI0 | नयाँ र मौलिक | ||
| TC58NYG0S3EBAI4JRH | नयाँ र मौलिक | ||
| TC58NVG5D2FTA2 | नयाँ र मौलिक | ||
| TC58NVGOS3ETAOO | नयाँ र मौलिक | ||
| TC58NVGOS3ETAOO-B3H | नयाँ र मौलिक |