SQ2318AES

SQ2318AES-T1_GE3 vs SQ2318AES-T1-GE3 vs SQ2318AES-T1-GES

 
PartNumberSQ2318AES-T1_GE3SQ2318AES-T1-GE3SQ2318AES-T1-GES
DescriptionMOSFET N-Channel 40V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ2318AES-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance31 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge8.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min30 S--
Fall Time5.7 ns--
Product TypeMOSFETMOSFET-
Rise Time8.4 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time7.5 ns--
Unit Weight0.000282 oz0.000282 oz-
Height-1.45 mm-
Length-2.9 mm-
Width-1.6 mm-
निर्माता भाग # विवरण RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ2318AES-T1_GE3 MOSFET N-Channel 40V AEC-Q101 Qualified
SQ2318AES-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ2318AES-T1_GE3
SQ2318AES-T1-GE3 N-CHANNEL 40-V (D-S) 175C MOSF
SQ2318AES-T1-GES नयाँ र मौलिक
Vishay
Vishay
SQ2318AES-T1_GE3 MOSFET N-CHAN 40V SOT23
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