 | |  | |
| PartNumber | SIHF9630S-GE3 | SIHF9540S-GE3 | SIHF9540PBF |
| Description | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | MOSFET -100V Vds +/-20V Vgs Rds(on) 0.20 @-10V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 100 V | - |
| Id Continuous Drain Current | 6.5 A | 19 A | - |
| Rds On Drain Source Resistance | 800 mOhms | 200 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - 4 V | - 4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 29 nC | 61 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Pd Power Dissipation | 74 W | 150 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Series | SIHF | SIH | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 2.8 S | 6.2 S | - |
| Fall Time | 24 ns | 57 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | 73 ns | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28 ns | 34 ns | - |
| Typical Turn On Delay Time | 12 ns | 16 ns | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHFL110TR-GE3 | MOSFET 100V Vds 20V Vgs SOT-223 | |
| SIHF9630STRL-GE3 | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | ||
| SIHF9630S-GE3 | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | ||
| SIHFB20N50K-E3 | MOSFET RECOMMENDED ALT 781-SIHP18N50C-E3 | ||
| SIHF9640S-GE3 | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | ||
| SIHFIB16N50K-E3 | MOSFET 500V 6.7A 45W 350mohm @ 10V | ||
| SIHF9540S-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
| SIHF9540PBF | MOSFET -100V Vds +/-20V Vgs Rds(on) 0.20 @-10V | ||
| SIHFB11N50A-E3 | MOSFET RECOMMENDED ALT 781-SIHP12N50C-E3 | ||
| SIHFIB16N50K-E3 | RF Bipolar Transistors MOSFET 500V 6.7A 45W 350mohm @ 10V | ||
| SIHF9630 | नयाँ र मौलिक | ||
| SIHF9640STRL-GE3 | नयाँ र मौलिक | ||
| SIHF9Z14S-GE3 | SIHF9Z14S-GE3 P-channel MOSFET Transistor, 4.7 A, 60 V, 3-Pin D2PAK | ||
| SIHF9Z34 | नयाँ र मौलिक | ||
| SIHFB16N50K-E3 | नयाँ र मौलिक | ||
| SIHFB18N50K-E3 | नयाँ र मौलिक | ||
| SIHFB9N65A | नयाँ र मौलिक | ||
| SIHFBC30ASTL-E3A | नयाँ र मौलिक | ||
| SIHFBC40AS-E3 | नयाँ र मौलिक | ||
| SIHFBE30 | नयाँ र मौलिक | ||
| SIHFBE30S-GE3 | नयाँ र मौलिक | ||
| SIHFBF20S | नयाँ र मौलिक | ||
| SIHFBF20STR-E3 | नयाँ र मौलिक | ||
| SIHFBF20STRL-GE3 | Transistor MOSFET N-CH 900V 1.7A 3-Pin TO-263 T/R (Alt: SIHFBF20STRL-GE3) | ||
| SIHFD121-E3 | नयाँ र मौलिक | ||
| SIHFI720G | नयाँ र मौलिक | ||
| SIHFI9Z24G | नयाँ र मौलिक | ||
| SIHFIB11N50A | नयाँ र मौलिक | ||
| SIHFIB11N50A,SIHFIB11N50 | नयाँ र मौलिक | ||
| SIHFIB11N50A-E3 | नयाँ र मौलिक | ||
| SIHFIB9N60A | नयाँ र मौलिक | ||
| SIHFIB9N60A-E3 | नयाँ र मौलिक | ||
| SIHFIB9N60A-E3,FIB9N60A | नयाँ र मौलिक | ||
| SIHFIB9N60A-E3,SIHFIB9N6 | नयाँ र मौलिक | ||
| SIHFIB9N65A 2SK4100 | नयाँ र मौलिक | ||
| SIHFIB9N65A,SIHFIB9N65A- | नयाँ र मौलिक | ||
| SIHFIB9N65A-E3 | नयाँ र मौलिक | ||
| SIHFIB9N65A-E3,SIHFIB9N6 | नयाँ र मौलिक | ||
| SIHFIB9N6A-E3 | नयाँ र मौलिक | ||
| SIHFIBC30G | नयाँ र मौलिक | ||
| SIHFIBC40GLC | नयाँ र मौलिक | ||
| SIHFIZ34G | नयाँ र मौलिक | ||
| SIHFL014 | नयाँ र मौलिक | ||
| SIHFL014-GE3 | नयाँ र मौलिक | ||
| SIHFL014TR-GE3 | MOSFET MOSFET N-CHANNEL 60V | ||
| SIHFL110 | नयाँ र मौलिक | ||
| SIHFL110TR-GE3 | HANNEL 100V | ||
| SIHFL210 | नयाँ र मौलिक | ||
Vishay |
SIHFB11N50A-E3 | MOSFET N-CH 500V 11A TO220AB | |
| SIHFB20N50K-E3 | MOSFET N-CH 500V 20A TO220AB |